机构

• 半导体研究所 [41]

采集方式

• OAI收割 [41]

内容类型

• 期刊论文 [41]

发表日期

• 2017 [3]
• 2016 [2]
• 2015 [1]
• 2013 [7]
• 2012 [1]
• 2011 [8]
• 更多

学科主题

• 半导体材料 [41]

筛选

浏览/检索结果: 共41条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO 期刊论文  OAI收割 Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107101 作者:  Zhan-Wei Shen;  Feng Zhang;  Sima Dimitrijev;  Ji-Sheng Han;  Guo-Guo Yan 收藏  |  浏览/下载：37/0  |  提交时间：2018/06/15 A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文  OAI收割 ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31 作者:  X. F. Liu;  z G. G. Yan;  Z. W. Shen;  Z. X.Wen;  L. X. Tian 收藏  |  浏览/下载：32/0  |  提交时间：2018/06/15 A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 7, 页码: 941-944 作者:  Zhengxin Wen;  Feng Zhang;  Member;  IEEE;  Zhanwei Shen 收藏  |  浏览/下载：36/0  |  提交时间：2018/06/01 Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition 期刊论文  OAI收割 Chinese Physics B, 2016, 卷号: 25, 期号: 12, 页码: 128104 Li-Xin Tian; Feng Zhang; Zhan-Wei Shen; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng 收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10 Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures 期刊论文  OAI收割 acs nano., 2016, 卷号: 10, 期号: 3, 页码: 3852−3858 Kenan Zhang; Tianning Zhang; Guanghui Cheng; Tianxin Li; Shuxia Wang; Wei Wei; Xiaohao Zhou; Weiwei Yu; Yan Sun; Peng Wang; Dong Zhang; Changgan Zeng; Xingjun Wang; Weida Hu; Hong Jin Fan; Guozhen Shen; Xin Chen; Xiangfeng Duan; Kai Chang; Ning Dai 收藏  |  浏览/下载：43/0  |  提交时间：2017/03/10 Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates 期刊论文  OAI收割 applied surface science, 2015, 卷号: 353, 页码: 744-749 Guoguo Yan; Feng Zhang; Yingxi Niu; Fei Yang; Xingfang Liu; Lei Wang; Wanshun Zhao; Guosheng Sun; Yiping Zeng 收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29 High sensitivity Hall devices with AlSb InAs quantum well structures 期刊论文  OAI收割 chinese physics b, 2013, 卷号: 22, 期号: 5, 页码: 7106 Zhang Yang, Zhang Yu-Wei, Wang Cheng-Yan, Guan Min, Cui Li-Jie, Li Yi-Yang, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping 收藏  |  浏览/下载：18/0  |  提交时间：2014/03/19 Fast Homoepitaxial Growth of 4H-SiC Films on 4∘ off-Axis Substrates in a SiH4-C2H4-H2 Systemb InAs quantum well structures 期刊论文  OAI收割 Chinese Physics Letters, 2013, 卷号: 30, 期号: 12, 页码: 8101 LIU Bin, SUN Guo-Sheng, LIU Xing-Fang, ZHANG Feng, DONG Lin, ZHENG Liu, YAN Guo-Guo, LIU Sheng-Bei, ZHAO Wan-Shun, WANG Lei, ZENG Yi-Ping, LI Xi-Guang, WANG Zhan-Guo, YANG Fei 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/18 Raman Spectra Analysis of GaN : Er Films Prepared by Ion Implantation 期刊论文  OAI收割 spectroscopy and spectral analysis, 2013, 卷号: 33, 期号: 3, 页码: 699-703 Tao Dong-yan; Liu Chao; Yin Chun-hai; Zeng Yi-ping 收藏  |  浏览/下载：12/0  |  提交时间：2013/09/17 Atomic Layer Deposition of BiFeO3 Thin Films Using β_ Diketonates and H2O 期刊论文  OAI收割 J. Phys. Chem. C, 2013, 卷号: 117, 页码: 24579–24585 Feng Zhang , Guosheng Sun , Wanshun Zhao , Lei Wang , Liu Zheng , Shengbei Liu , Bin Liu , Lin Dong , Xingfang Liu , Guoguo Yan , Lixin Tian , and Yiping Zeng 收藏  |  浏览/下载：23/0  |  提交时间：2014/03/19