中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 光电子学 [22]
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浏览/检索结果: 共22条,第1-10条 帮助

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Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文  OAI收割
IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108
作者:  
Jing Yang;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu
  |  收藏  |  浏览/下载:28/0  |  提交时间:2018/11/30
Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination 期刊论文  OAI收割
Journal of Alloys and Compounds, 2017, 卷号: 725, 期号: 2017, 页码: 1130-1135
作者:  
Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi
收藏  |  浏览/下载:30/0  |  提交时间:2018/07/11
Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文  OAI收割
IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023
作者:  
Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi
收藏  |  浏览/下载:27/0  |  提交时间:2018/07/11
Suppression of optical field leakage to GaN substrate in GaN-based green laser diode 期刊论文  OAI收割
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 484-489
作者:  
Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu
收藏  |  浏览/下载:33/0  |  提交时间:2018/07/11
New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode 期刊论文  OAI收割
Optics and Laser Technology, 2017, 卷号: 97, 页码: 284–289
作者:  
Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu
收藏  |  浏览/下载:17/0  |  提交时间:2018/07/11
Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact 期刊论文  OAI收割
Applied Optics, 2017, 卷号: 56, 期号: 14, 页码: 4197-4200
作者:  
Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu
收藏  |  浏览/下载:16/0  |  提交时间:2018/07/11
Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer 期刊论文  OAI收割
Journal of Crystal Growth, 2017, 卷号: 467, 页码: 1-5
作者:  
Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu
收藏  |  浏览/下载:30/0  |  提交时间:2018/07/11
Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文  OAI收割
superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du
收藏  |  浏览/下载:29/0  |  提交时间:2017/03/10
Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文  OAI收割
journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 4, 页码: 041211
Xiang Li; Zongshun Liu; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Jing Yang; Lingcong Le; Wei Liu; Xiaoguang He; Xiaojing Li; Feng Liang
收藏  |  浏览/下载:18/0  |  提交时间:2017/03/10
Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors 期刊论文  OAI收割
journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011204
Xiaojing Li; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Zongshun Liu; Lingcong Le; Jing Yang; Xiaoguang He; Liqun Zhang; Shuming Zhang; Jianping Liu; Hui Yang
收藏  |  浏览/下载:18/0  |  提交时间:2017/03/10