中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [6]
采集方式
OAI收割 [6]
内容类型
会议论文 [3]
期刊论文 [3]
发表日期
2017 [2]
2007 [2]
2006 [2]
学科主题
半导体材料 [6]
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Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation
期刊论文
OAI收割
Journal of Applied Physics, 2017, 卷号: 121, 页码: 193901
作者:
X. L. Zeng
;
J. L. Yu
;
S. Y. Cheng
;
Y. F. Lai, Y. H. Chen
;
W. Huang
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2018/05/23
A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition
期刊论文
OAI收割
ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31
作者:
X. F. Liu
;
z G. G. Yan
;
Z. W. Shen
;
Z. X.Wen
;
L. X. Tian
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2018/06/15
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers
会议论文
OAI收割
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Ning, J (Ning, J.)
;
Zhao, YM (Zhao, Y. M.)
;
Luo, MC (Luo, M. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:89/9
  |  
提交时间:2010/03/29
AVALANCHE PHOTODIODES
AREA
Micro-raman investigation of defects in a 4H-SiC homoepilayer
会议论文
OAI收割
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Zhao, YM (Zhao, Y. M.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:162/28
  |  
提交时间:2010/03/29
micro-raman
4H-SiC
defects
3C-inclusions
triangle-shaped inclusion
EPITAXIAL LAYERS
SILICON-CARBIDE
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
期刊论文
OAI收割
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.)
;
Liu XF (Liu X. F.)
;
Gong QC (Gong Q. C.)
;
Wang L (Wang L.)
;
Zhao WS (Zhao W. S.)
;
Li JY (Li J. Y.)
;
Zeng YP (Zeng Y. P.)
;
Li JM (Li J. M.)
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/04/11
4H-SiC
homoepitaxial layers
surface morphological defect
optical microscopy
SILICON-CARBIDE
DISLOCATIONS
FILMS
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
会议论文
OAI收割
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Sun, GS (Sun, G. S.)
;
Liu, XF (Liu, X. F.)
;
Gong, QC (Gong, Q. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Li, JY (Li, J. Y.)
;
Zeng, YP (Zeng, Y. P.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:166/18
  |  
提交时间:2010/03/29
4H-SiC