机构

• 半导体研究所 [61]

采集方式

• OAI收割 [61]

内容类型

• 期刊论文 [51]
• 会议论文 [10]

发表日期

• 2014 [3]
• 2012 [2]
• 2011 [7]
• 2010 [1]
• 2009 [7]
• 2008 [6]
• 更多

学科主题

• 半导体材料 [61]

筛选

浏览/检索结果: 共61条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods 期刊论文  OAI收割 applied physics letters, 2014, 卷号: 105, 期号: 1, 页码: 012404 Barate, P; Liang, S; Zhang, TT; Frougier, J; Vidal, M; Renucci, P; Devaux, X; Xu, B; Jaffres, H; George, JM; Marie, X; Hehn, M; Mangin, S; Zheng, Y; Amand, T; Tao, B; Han, XF; Wang, Z; Lu, Y 收藏  |  浏览/下载：18/0  |  提交时间：2015/03/25 Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector 期刊论文  OAI收割 physical review b, 2014, 卷号: 90, 期号: 8, 页码: 085310 Liang, SH; Zhang, TT; Barate, P; Frougier, J; Vidal, M; Renucci, P; Xu, B; Jaffres, H; George, JM; Devaux, X; Hehn, M; Marie, X; Mangin, S; Yang, HX; Hallal, A; Chshiev, M; Amand, T; Liu, HF; Liu, DP; Han, XF; Wang, ZG; Lu, Y 收藏  |  浏览/下载：18/0  |  提交时间：2015/03/25 Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures 期刊论文  OAI收割 scientific reports, 2014, 卷号: 4, 页码: 6521 Wang, JM; Xu, FJ; Zhang, X; An, W; Li, XZ; Song, J; Ge, WK; Tian, GS; Lu, J; Wang, XQ; Tang, N; Yang, ZJ; Li, W; Wang, WY; Jin, P; Chen, YH; Shen, B 收藏  |  浏览/下载：20/0  |  提交时间：2015/03/20 Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes 期刊论文  OAI收割 optics express, OPTICS EXPRESS, 2012, 2012, 卷号: 20, 20, 期号: 6, 页码: 6808-6815, 6808-6815 作者:  Zhang, YY;  Xie, HZ;  Zheng, HY;  Wei, TB;  Yang, H   |  收藏  |  浏览/下载：17/0  |  提交时间：2013/03/17 20 W High-Power Picosecond Single-Walled Carbon Nanotube Based MOPA Laser System 期刊论文  OAI收割 journal of lightwave technology, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2012, 2012, 卷号: 30, 30, 期号: 16, 页码: 2713-2717, 2713-2717 作者:  Zhang L (Zhang, Ling);  Wang YG (Wang, Yong Gang);  Yu HJ (Yu, Hai Juan);  Sun W (Sun, Wei);  Yang YY (Yang, Ying Ying)   |  收藏  |  浏览/下载：16/0  |  提交时间：2013/04/02 MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者:  Jia CH;  Song HP 收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05 Anisotropy  Crystal morphology  Metalorganic chemical vapor deposition  a-Plane InN  INDIUM NITRIDE  MOVPE GROWTH  CUBIC INN  SAPPHIRE  GAN  MBE   Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells 期刊论文  OAI收割 solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445 作者:  Liu K 收藏  |  浏览/下载：87/5  |  提交时间：2011/07/05 Polyaniline  Electrodeposition  Thin films  Buffer layers  Solar cells  PHOTOVOLTAIC CELLS  POLYMER  NANOWIRES  EFFICIENCY   Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文  OAI收割 nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603 作者:  Song HP 收藏  |  浏览/下载：68/3  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  SEMICONDUCTOR NANOWIRES  NITRIDE NANOTUBES  GAN  EMISSION  MECHANISM   GaN grown with InGaN as a weakly bonded layer 期刊论文  OAI收割 crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585 作者:  Wei HY;  Song HP 收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  SI(001) SUBSTRATE  STRAIN  EPITAXY   Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.50 作者:  Wei HY;  Song HP;  Zhang B 收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  CORE-LEVEL PHOTOEMISSION  SB-DOPED SNO2  INN  GROWTH  GAN  NAXWO3  ALLOYS  GREEN  STATE