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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [12]
采集方式
OAI收割 [12]
内容类型
期刊论文 [12]
发表日期
2009 [2]
2006 [2]
2003 [1]
2001 [1]
2000 [2]
1998 [1]
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学科主题
半导体材料 [12]
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共12条,第1-10条
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学科主题:半导体材料
内容类型:期刊论文
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Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation
期刊论文
OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001
作者:
Wei XC
;
Duan RF
;
Ding K
收藏
  |  
浏览/下载:76/19
  |  
提交时间:2010/03/08
LOCALIZATION
SEMICONDUCTORS
EMISSION
BOXES
BAND
Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)
期刊论文
OAI收割
chinese physics letters, 2009, 卷号: 26, 期号: 5, 页码: art. no. 056801
作者:
You JB
;
Zhang XW
;
Fan YM
;
Tan HR
收藏
  |  
浏览/下载:368/49
  |  
提交时间:2010/03/08
BN THIN-FILMS
REFRACTIVE-INDEX
ELLIPSOMETRY
NUCLEATION
DIAMOND
DENSITY
High quality microcrystalline Si films by hydrogen dilution profile
期刊论文
OAI收割
thin solid films, 2006, 卷号: 515, 期号: 2, 页码: 452-455
Gu JH (Gu Jinhua)
;
Zhu MF (Zhu Meifang)
;
Wang LJ (Wang Liujiu)
;
Liu FZ (Liu Fengzhen)
;
Zhou BQ (Zhou Bingqing)
;
Ding K (Ding Kun)
;
Li GH (Li Guohua)
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/04/11
microcrystalline Si thin film
hydrogen dilution profiling
incubation layer
uniformity
CHEMICAL-VAPOR-DEPOSITION
THIN
ALLOYS
CVD
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
期刊论文
OAI收割
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者:
Ye XL
;
Xu B
;
Jin P
收藏
  |  
浏览/下载:90/0
  |  
提交时间:2010/04/11
GAAS
SPECTROSCOPY
PARAMETERS
TRANSPORT
LASERS
ENERGY
STATES
HOLE
Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 256, 期号: 1-2, 页码: 78-82
Ye ZZ
;
Ma DW
;
He JH
;
Huang JY
;
Zhao BH
;
Luo XD
;
Xu ZY
收藏
  |  
浏览/下载:487/1
  |  
提交时间:2010/08/12
characterization
crystal structure
DC sputtering
alloys
zinc compounds
semiconducting II-VI materials
THIN-FILMS
ROOM-TEMPERATURE
ULTRAVIOLET-LASER
SPRAY-PYROLYSIS
ZNO
MGXZN1-XO
EMISSION
ALLOY
Structural characterization of cubic GaN grown on GaAs(001) substrates
期刊论文
OAI收割
chinese journal of electronics, 2001, 卷号: 10, 期号: 2, 页码: 219-222
Zheng XH
;
Qu B
;
Wang YT
;
Yang H
;
Liang JW
;
Han JY
收藏
  |  
浏览/下载:93/4
  |  
提交时间:2010/08/12
cubic GaN
X-ray double crystal diffraction
structural characteristics
CONTINUOUS-WAVE OPERATION
EPITAXIAL-GROWTH
HEXAGONAL GAN
LASER-DIODES
THIN-FILMS
MBE
X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures
期刊论文
OAI收割
journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32
Pan Z
;
Wang YT
;
Li LH
;
Zhang W
;
Lin YW
;
Zhou ZQ
;
Wu RH
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
x-ray diffraction
strain relaxation
GaNxAs1-x/GaAs
photoluminescence
RHEED
MOLECULAR-BEAM EPITAXY
TEMPERATURE PULSED OPERATION
BAND-GAP ENERGY
NITROGEN
GAASN
GANXAS1-X
GAAS1-XNX
ALLOYS
LASERS
LAYERS
Point defects in III-V compound semiconductors
期刊论文
OAI收割
defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93
Chen N
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/08/12
compound semiconductors
point defects
deep level centres
stoichiometry
MOLECULAR-BEAM EPITAXY
GAAS SINGLE-CRYSTALS
SEMIINSULATING GALLIUM-ARSENIDE
SEMI-INSULATING GAAS
ELECTRICAL-PROPERTIES
LATTICE-PARAMETER
NATIVE DEFECTS
CARBON
DIFFRACTOMETER
STOICHIOMETRY
Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction
期刊论文
OAI收割
journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630
Wang HM
;
Zeng YP
;
Zhou HW
;
Kong MY
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
HALL ELEMENTS
GAAS
MISORIENTATION
DISTORTION
LAYERS
MBE
SI
HETEROSTRUCTURES
GROWTH
Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures
期刊论文
OAI收割
science in china series a-mathematics physics astronomy, 1997, 卷号: 40, 期号: 2, 页码: 214-218
Chen NF
;
He HJ
;
Wang YT
;
Lin LY
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/11/17
low temperature
molecular beam epitaxy
GaAs single crystal
lattice parameter
arsenic interstitial couples
arsenic precipitates
effects of backgating or sidegating
LAYERS
DEPENDENCE