机构

• 半导体研究所 [23]

采集方式

• OAI收割 [23]

内容类型

• 会议论文 [23]

发表日期

• 2010 [1]
• 2008 [5]
• 2006 [6]
• 2004 [2]
• 2003 [1]
• 2002 [1]
• 更多

学科主题

• 半导体材料 [13]
• 光电子学 [5]
• 半导体物理 [4]
• 半导体化学 [1]

筛选

浏览/检索结果: 共23条，第1-10条 帮助 限定条件 存缴方式：oaiharvest    内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 会议论文  OAI收割 6th international conference on nanoscience and technology, beijing, peoples r china, jun 04-06, 2007 Wu, BP; Wu, DH; Xiong, YH; Huang, SS; Ni, HQ; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：50/0  |  提交时间：2010/03/09 InAs Quantum Dots   High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09 GaN  nitrides  LED  MOCVD  patterned sapphire substrate  wet etching   Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 AlGaN  GaN template  A1N interlayer  MOCVD  crack  interference fringes   Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P 会议论文  OAI收割 6th international conference on thin film physics and applications, shanghai, peoples r china, sep 25-28, 2007 Sun, MX; Tan, MQ; Zhao, M 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 antireflective coatings  superluminescent diodes  double source electron beam evaporation technology   High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09 Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文  OAI收割 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：100/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文  OAI收割 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM 收藏  |  浏览/下载：202/36  |  提交时间：2010/03/29 MOCVD   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文  OAI收割 3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：166/29  |  提交时间：2010/03/29 time-resolved photoluminescence   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文  OAI收割 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：132/26  |  提交时间：2010/03/29 anodic alumina films