机构

• 半导体研究所 [26]

采集方式

• OAI收割 [26]

内容类型

• 期刊论文 [24]
• 会议论文 [2]

发表日期

• 2010 [26]

学科主题

• 半导体材料 [26]

筛选

浏览/检索结果: 共26条，第1-10条 帮助 限定条件 发表日期：2010    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Donor defect in P-diffused bulk ZnO single crystal 会议论文  OAI收割 29th international conference on physics of semiconductors, rio de janeiro, brazil, 2009 Zhao YW (Zhao Youwen); Zhang R (Zhang Rui); Zhang F (Zhang Fan); Dong ZY (Dong Zhiyuan); Yang J (Yang Jun) 收藏  |  浏览/下载：463/158  |  提交时间：2010/10/11 Zinc Oxide  doping  defect   STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS 会议论文  OAI收割 34th ieee photovoltaic specialists conference, philadelphia, pa, 2009 Peng WB (Peng Wenbo); Zeng XB (Zeng Xiangbo); Liu SY (Liu Shiyong); Xiao HB (Xiao Haibo); Kong GL (Kong Guanglin); Yu YD (Yu Yude); Liao XB (Liao Xianbo) 收藏  |  浏览/下载：252/64  |  提交时间：2010/08/16 The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文  OAI收割 solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994 Song HP (Song H. P.); Zheng GL (Zheng G. L.); Yang AL (Yang A. L.); Guo Y (Guo Y.); Wei HY (Wei H. Y.); Li CM (Li C. M.); Yang SY (Yang S. Y.); Liu XL (Liu X. L.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/27 ZnO  In2O3  MOCVD  Photoelectron spectroscopies  IN2O3-ZNO FILMS  TRANSPARENT  OXIDE  SEMICONDUCTORS  INN   Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 107, 期号: 10, 页码: art. no. 104510 Xu XQ (Xu Xiaoqing); Liu XL (Liu Xianglin); Guo Y (Guo Yan); Wang J (Wang Jun); Song HP (Song Huaping); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：182/49  |  提交时间：2010/06/18 PHOTOEMISSION-SPECTROSCOPY  PRECISE DETERMINATION  GA-FACE  SURFACE  ALN  HETEROJUNCTIONS  DISCONTINUITY  LEVEL   Surface roughness scattering in two dimensional electron gas channel 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111 Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG 收藏  |  浏览/下载：48/5  |  提交时间：2011/07/05 MOLECULAR-BEAM EPITAXY  MOBILITY ALGAN/GAN HETEROSTRUCTURES  RAY PHOTOEMISSION SPECTROSCOPY  PERFORMANCE  ALN  MODFETS  INN   Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy 期刊论文  OAI收割 chinese physics letters, 2010, 卷号: 27, 期号: 6, 页码: art. no. 067302 Guo Y (Guo Yan); Liu XL (Liu Xiang-Lin); Song HP (Song Hua-Ping); Yang AL (Yang An-Li); Zheng GL (Zheng Gao-Lin); Wei HY (Wei Hong-Yuan); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：204/46  |  提交时间：2010/07/05 GE  GAAS  GROWTH   Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043702 Li GD (Li Guodong); Yin H (Yin Hong); Zhu QS (Zhu Qinsheng); Sakaki H (Sakaki Hiroyuki); Jiang C (Jiang Chao) 收藏  |  浏览/下载：204/41  |  提交时间：2010/10/11 PHOTOLUMINESCENCE  HETEROJUNCTIONS  SPECTROSCOPY  SYSTEMS  PHYSICS   Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文  OAI收割 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：18/0  |  提交时间：2010/12/12 DEPENDENCE  SPECTRA   Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：185/32  |  提交时间：2010/05/04 alloying  annealing  electrical conductivity  excitons  II-VI semiconductors  magnesium compounds  MOCVD coatings  photoluminescence  positron annihilation  semiconductor thin films  vacancies (crystal)  wide band gap semiconductors  zinc compounds  SEMICONDUCTORS  EMISSION  ORIGIN  DIODES   Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy 期刊论文  OAI收割 applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 2, 页码: 511-514 作者:  Jia CH;  Zhou XL 收藏  |  浏览/下载：168/37  |  提交时间：2010/06/04 BATIO3  SRTIO3