中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  1. CAS IR Grid
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  • 半导体研究所 [8]
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  • 2021 [8]
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浏览/检索结果: 共8条，第1-8条 帮助

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Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications 期刊论文  OAI收割
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 卷号: 218, 期号: 18, 页码: 2100151
作者:  Jia, Yeting;   Wang, Quan;   Chen, Changxi;   Feng, Chun;   Li, Wei;   Jiang, Lijuan;   Xiao, Hongling;   Wang, Qian;   Xu, Xiangang;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：64/0  |  提交时间：2022/05/19
Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD 期刊论文  OAI收割
MATERIALS, 2021, 卷号: 14, 期号: 18, 页码: 5339
作者:  Zhang, Lian;   Wang, Rong;   Liu, Zhe;   Cheng, Zhe;   Tong, Xiaodong;   Xu, Jianxing;   Zhang, Shiyong;   Zhang, Yun;   Chen, Fengxiang
  |  收藏  |  浏览/下载：26/0  |  提交时间：2022/05/19
Group velocity matters for accurate prediction of phonon-limited carrier mobility 期刊论文  OAI收割
CHINESE PHYSICS B, 2021, 卷号: 30, 期号: 8, 页码: 87201
作者:  Yang, Qiao-Lin;   Deng, Hui-Xiong;   Wei, Su-Huai;   Luo, Jun-Wei
  |  收藏  |  浏览/下载：13/0  |  提交时间：2022/05/19
Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method 期刊论文  OAI收割
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 9, 页码: 95011
作者:  Pan, Shijie;   Feng, Shiwei;   Li, Xuan;   Zheng, Xiang;   Lu, Xiaozhuang;   Hu, Chaoxu;   He, Xin;   Bai, Kun;   Zhou, Lixing;   Zhang, Yamin
  |  收藏  |  浏览/下载：20/0  |  提交时间：2022/05/18
Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling 期刊论文  OAI收割
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 卷号: 10, 期号: 5, 页码: 55005
作者:  Li, Zhipeng;   Wang, Quan;   Feng, Chun;   Wang, Qian;   Niu, Di;   Jiang, Lijuan;   Li, Wei;   Xiao, Hongling;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：14/0  |  提交时间：2022/07/25
Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism 期刊论文  OAI收割
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 卷号: 218, 期号: 12, 页码: 2000827
作者:  Hu, Haoyue;   Xiao, Hongling;   Guo, Fen;   Wang, Quan;   Feng, Chun;   Jiang, Lijuan;   Wang, Qian;   Liu, Hongxin;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：9/0  |  提交时间：2022/07/26
Room Temperature 2DEG Mobility Above 2350 cm(2)/V center dot s in AlGaN/GaN HEMT Grown on GaN Substrate 期刊论文  OAI收割
JOURNAL OF ELECTRONIC MATERIALS, 2021, 卷号: 50, 期号: 5, 页码: 2630-2636
作者:  Chu, Jiayan;   Wang, Quan;   Jiang, Lijuan;   Feng, Chun;   Li, Wei;   Liu, Hongxin;   Xiao, Hongling;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：14/0  |  提交时间：2022/11/03
Ridge-channel AlGaN/GaN normally-off high-electron mobility transistor based on epitaxial lateral overgrowth 期刊论文  OAI收割
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 7, 页码: 75003
作者:  Ji, Xiaoli;   Fariza, Aqdas;   Zhao, Jie;   Wang, Maojun;   Wang, Junxi;   Yang, Fuhua;   Li, Jinmin;   Wei, Tongbo
  |  收藏  |  浏览/下载：8/0  |  提交时间：2022/07/26