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CAS IR Grid
机构
半导体研究所 [34]
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OAI收割 [31]
iSwitch采集 [3]
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期刊论文 [34]
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2011 [3]
2009 [3]
2008 [1]
2007 [2]
2006 [8]
2005 [4]
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学科主题
光电子学 [9]
半导体材料 [9]
半导体物理 [9]
微电子学 [4]
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浏览/检索结果:
共34条,第1-10条
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内容类型:期刊论文
专题:半导体研究所
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A practical route towards fabricating GaN nanowire arrays
期刊论文
OAI收割
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ
;
Huang, J
;
Gong, XJ
;
Wang, JF
;
Xu, K
;
Qiu, YX
;
Cai, DM
;
Zhou, TF
;
Ren, GQ
;
Yang, H
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
CHEMICAL-VAPOR-DEPOSITION
WELL NANOROD ARRAYS
ULTRAVIOLET-LIGHT
GROWTH
NANOGENERATORS
DISLOCATIONS
BRIGHTNESS
LAYERS
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
OAI收割
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
期刊论文
OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102
作者:
He JF
;
Wang HL
;
Shang XJ
;
Li MF
;
Zhu Y
  |  
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2012/01/06
1.3 MU-M
STRAIN RELIEF
LASERS
SUBSTRATE
PHOTOLUMINESCENCE
DISLOCATIONS
OPERATION
RANGE
1.3 Mu-m
Strain Relief
Lasers
Substrate
Photoluminescence
Dislocations
Operation
Range
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
收藏
  |  
浏览/下载:236/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE
期刊论文
OAI收割
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者:
Yang JK
;
Wei TB
;
Duan RF
收藏
  |  
浏览/下载:73/3
  |  
提交时间:2010/03/08
VAPOR-PHASE EPITAXY
DISLOCATIONS
SUBSTRATE
LAYER
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:
Yang H
;
Wang H
;
Wang H
;
Wang YT
;
Yang H
收藏
  |  
浏览/下载:64/1
  |  
提交时间:2010/03/08
edge dislocations
gallium compounds
III-V semiconductors
impurities
photoluminescence
semiconductor doping
semiconductor thin films
silicon
wide band gap semiconductors
X-ray diffraction
Dislocation scattering in AlxGa1-xN/GaN heterostructures
期刊论文
OAI收割
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ
;
Liu, XL
;
Han, XX
;
Yuan, HR
;
Wang, J
;
Guo, Y
;
Song, HP
;
Zheng, GL
;
Wei, HY
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2010/03/08
aluminium compounds
dislocation density
electron mobility
gallium compounds
III-V semiconductors
interface roughness
semiconductor heterojunctions
two-dimensional electron gas
wide band gap semiconductors
Grating optimization and experiment on high-power distributed feedback lasers
期刊论文
iSwitch采集
Acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1613-1616
作者:
Fu Sheng-Hui
;
Song Guo-Feng
;
Chen Liang-Hui
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2019/05/12
Dfb lasers
Coupled-wave theory
Second-order gratings
Sidemode suppression ratio
Grating optimization and experiment on high-power distributed feedback lasers
期刊论文
OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1613-1616
Fu SH (Fu Sheng-Hui)
;
Song GF (Song Guo-Feng)
;
Chen LH (Chen Liang-Hui)
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/03/29
DFB lasers
High-power algainp laser diodes with current-injection-free region near the laser facet
期刊论文
iSwitch采集
Optical engineering, 2006, 卷号: 45, 期号: 3, 页码: 3
作者:
Xu, Y
;
Li, YZ
;
Gan, QQ
;
Cao, Q
;
Song, GF
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/05/12
Laser diodes
Algainp
Ridge waveguide
Current-injection-free region