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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [22]
采集方式
OAI收割 [22]
内容类型
期刊论文 [21]
会议论文 [1]
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2010 [2]
2005 [1]
2003 [3]
2002 [5]
2001 [8]
1995 [1]
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学科主题
半导体材料 [22]
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Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate
期刊论文
OAI收割
ieee electron device letters, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103
Yang ZC (Yang Z. C.)
;
Huang AP (Huang A. P.)
;
Zheng XH (Zheng X. H.)
;
Xiao ZS (Xiao Z. S.)
;
Liu XY (Liu X. Y.)
;
Zhang XW (Zhang X. W.)
;
Chu PK (Chu Paul K.)
;
Wang WW (Wang W. W.)
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2010/11/14
Electron state density
Fermi-level pinning (FLP)
MIS structures
work function (WF)
WORK FUNCTION
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks
期刊论文
OAI收割
applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908
Zheng XH (Zheng X. H.)
;
Huang AP (Huang A. P.)
;
Xiao ZS (Xiao Z. S.)
;
Yang ZC (Yang Z. C.)
;
Wang M (Wang M.)
;
Zhang XW (Zhang X. W.)
;
Wang WW (Wang W. W.)
;
Chu PK (Chu Paul K.)
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/14
OXYGEN
GATE
DIFFUSION
FILMS
Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition
期刊论文
OAI收割
applied physics a-materials science & processing, 2005, 卷号: 80, 期号: 1, 页码: 141-144
Chen DJ
;
Shen B
;
Bi ZX
;
Zhang KX
;
Gu SL
;
Zhang R
;
Shi, Y
;
Zheng YD
;
Sun XH
;
Wan SK
;
Wang ZG
收藏
  |  
浏览/下载:119/41
  |  
提交时间:2010/03/09
MOLECULAR-BEAM EPITAXY
GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 255, 期号: 1-2, 页码: 52-56
Chen DJ
;
Shen B
;
Bi ZX
;
Zhang KX
;
Gu SL
;
Zhang R
;
Shi Y
;
Zheng YD
;
Sun XH
;
Wan SK
;
Wang ZG
收藏
  |  
浏览/下载:470/1
  |  
提交时间:2010/08/12
metalorganic chemical vapor deposition
nitrides
semiconducting III-V materials
MOLECULAR-BEAM EPITAXY
GAN-RICH SIDE
RADICAL CELL
III-V
Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 345-348
Zheng XH
;
Wang YT
;
Feng ZH
;
Yang H
;
Chen H
;
Zhou JM
;
Liang JW
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/08/12
in-plane strain
lattice parameters
triple-axis diffraction
c-GaN
GROWTH
FILMS
X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 254, 期号: 1-2, 页码: 23-27
Shen XM
;
Wang YT
;
Zheng XH
;
Zhang BS
;
Chen J
;
Feng G
;
Yang H
收藏
  |  
浏览/下载:111/0
  |  
提交时间:2010/08/12
buffer layers
x-ray diffraction
metalorganic chemical vapor deposition
nitrides
VAPOR-PHASE EPITAXY
NUCLEATION LAYERS
CUBIC GAN
(001)GAAS SUBSTRATE
STRAIN RELAXATION
TEMPERATURE
DEPOSITION
QUALITY
DIODES
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth
期刊论文
OAI收割
science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467
作者:
Zhao DG
收藏
  |  
浏览/下载:68/0
  |  
提交时间:2010/08/12
GaN
epitaxial lateral overgrowth
crystallographic tilt
double crystal X-ray diffraction
FILMS
DEFECTS
GAAS
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate
期刊论文
OAI收割
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 255-260
作者:
Zhang SM
;
Zhao DG
收藏
  |  
浏览/下载:84/5
  |  
提交时间:2010/08/12
wafer bonding
cubic
GaN/GaAs(001)
Si-substrate
LIGHT-EMITTING-DIODES
P-TYPE GAN
RESISTANCE
CONTACT
LASER
Thermodynamics and kinetics analysis of in-situ synthesizing AlN
期刊论文
OAI收割
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 249-254
Zheng XH
;
Wang Q
;
Zhou ML
;
Li CG
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/08/12
Al-Mg alloy
in-situ synthesis
AlN
Mg
thermo-dynamical
dynamics
THERMAL-CONDUCTIVITY
ALUMINUM NITRIDE
HETEROSTRUCTURE
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
作者:
Zhao DG
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2010/08/12
X-ray diffraction
etching
metalorganic vapor-phase epitaxy
nitrides
semiconducting III-V materials
LIGHT-EMITTING-DIODES
VAPOR-PHASE EPITAXY
FILMS
DISLOCATIONS
DENSITY
GROWTH
LAYERS