机构

• 半导体研究所 [8]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [8]

发表日期

• 2010 [1]
• 2007 [1]
• 2003 [1]
• 2002 [3]
• 1992 [1]
• 1991 [1]
• 更多

学科主题

• 半导体物理 [8]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体物理    内容类型：期刊论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots 期刊论文  OAI收割 journal of physical chemistry c, JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 2010, 卷号: 114, 114, 期号: 11, 页码: 4841-4845, 4841-4845 作者:  Deng HX (Deng Hui-Xiong);  Li SS (Li Shu-Shen);  Li JB (Li Jingbo);  Li, JB, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail Address: jbli@semi.ac.cn   |  收藏  |  浏览/下载：79/17  |  提交时间：2010/04/13 1ST-PRINCIPLES CALCULATIONS  1st-principles Calculations  Molecular-dynamics  Indium-phosphide  Exciton-states  Small Pbse  Nanocrystals  Photoluminescence  Generation  Nanowires  MOLECULAR-DYNAMICS  INDIUM-PHOSPHIDE  EXCITON-STATES  SMALL PBSE  NANOCRYSTALS  PHOTOLUMINESCENCE  GENERATION  NANOWIRES   Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property 期刊论文  OAI收割 acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541 Zhao, YW (Zhao You-Wen); Miao, SS (Miao Shan-Shan); Dong, ZY (Dong Zhi-Yuan); Lue, XH (Lue Xiao-Hong); Deng, AH (Deng Ai-Hong); Yang, J (Yang Jun); Wang, B (Wang Bo) 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29 indium phosphide   Effects of annealing ambient on the formation of compensation defects in InP 期刊论文  OAI收割 journal of applied physics, 2003, 卷号: 93, 期号: 2, 页码: 930-932 Deng AH; Mascher P; Zhao YW; Lin LY 收藏  |  浏览/下载：29/0  |  提交时间：2010/08/12 UNDOPED SEMIINSULATING INP  LOW FE CONTENT  POSITRON-LIFETIME  PHASE EPITAXY  PRESSURE  VACANCY  INDIUM  ANNIHILATION  PHOSPHIDE  WAFERS   Creation and suppression of point defects through a kick-out substitution process of Fe in InP 期刊论文  OAI收割 applied physics letters, 2002, 卷号: 80, 期号: 16, 页码: 2878-2879 Zhao YW; Dong HW; Chen YH; Zhang YH; Jiao JH; Zhao JQ; Lin LY; Fung S 收藏  |  浏览/下载：88/2  |  提交时间：2010/08/12 SEMIINSULATING INP  ZN DIFFUSION  COMPLEXES  PHOSPHIDE  MECHANISM  CRYSTALS   Positron-annihilation study of compensation defects in InP 期刊论文  OAI收割 journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001 Shan YY; Deng AH; Ling CC; Fung S; Ling CD; Zhao YW; Sun TN; Sun NF 收藏  |  浏览/下载：99/9  |  提交时间：2010/08/12 UNDOPED SEMIINSULATING INP  INDIUM-PHOSPHIDE  LIFETIME  VACANCY  MECHANISMS  ACCEPTOR  GROWTH  GAAS   Fe-diffusion-induced defects in InP annealed in iron phosphide ambient 期刊论文  OAI收割 japanese journal of applied physics part 1-regular papers short notes & review papers, 2002, 卷号: 41, 期号: 4a, 页码: 1929-1931 Zhao YW; Dong HW; Jiao JH; Zhao JQ; Lin LY 收藏  |  浏览/下载：96/7  |  提交时间：2010/08/12 indium phosphide  annealing  semi-insulating  defect  diffusion  ENCAPSULATED CZOCHRALSKI INP  SEMIINSULATING INP  PHOTO-LUMINESCENCE  INDIUM-PHOSPHIDE  UNDOPED INP  PHOTOLUMINESCENCE  CRYSTALS  PRESSURE   INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS 期刊论文  OAI收割 physical review b, 1992, 卷号: 46, 期号: 19, 页码: 12358-12364 WANG JQ; GU ZQ; LI MF; LAI WY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 LATTICE-DYNAMICAL PROPERTIES  SCATTERING RATES  ZINCBLENDE SEMICONDUCTORS  TEMPERATURE-DEPENDENCE  GALLIUM-PHOSPHIDE  ELECTRON-PHONON  GAAS  SPECTROSCOPY  POINTS  ZONE   1ST PRINCIPLES PSEUDOPOTENTIAL CALCULATIONS OF ZONE BOUNDARY PHONON FREQUENCIES OF III-V-ZINCBLENDE SEMICONDUCTORS 期刊论文  OAI收割 physics letters a, 1991, 卷号: 155, 期号: 0, 页码: 506-509 WANG JQ; GU ZQ; LI MF 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 NORM-CONSERVING PSEUDOPOTENTIALS  LATTICE-DYNAMICS  DEFORMATION POTENTIALS  STRUCTURAL-PROPERTIES  GALLIUM-PHOSPHIDE  TIN  ALP