中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [33]
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OAI收割 [20]
iSwitch采集 [13]
内容类型
期刊论文 [33]
发表日期
2011 [1]
2010 [2]
2007 [5]
2006 [5]
2005 [4]
2004 [2]
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学科主题
半导体材料 [11]
半导体物理 [8]
光电子学 [1]
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共33条,第1-10条
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内容类型:期刊论文
专题:半导体研究所
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF
;
Chen, YH
;
Lei, W
;
Zhou, XL
;
Luo, S
;
Hu, YZ
;
Wang, LJ
;
Yang, T
;
Wang, ZG
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/02/06
RAMAN-SCATTERING
SEMICONDUCTING NANOWIRES
OPTOELECTRONIC DEVICES
PHOSPHIDE NANOWIRES
OPTICAL PHONONS
SILICON
CRYSTALS
SPECTRA
The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system
期刊论文
OAI收割
crystengcomm, 2010, 卷号: 12, 期号: 11, 页码: 3936-3941
Song HP (Song Huaping)
;
Guo Y (Guo Yan)
;
Yang A (Yang Anli)
;
Wei HY (Wei Hongyuan)
;
Xu XQ (Xu Xiaoqing)
;
Liu JM (Liu Jianming)
;
Yang SY (Yang Shaoyan)
;
Liu XL (Liu Xianglin)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2010/11/14
INDIUM-PHOSPHIDE NANOWIRES
Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots
期刊论文
OAI收割
journal of physical chemistry c, JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 2010, 卷号: 114, 114, 期号: 11, 页码: 4841-4845, 4841-4845
作者:
Deng HX (Deng Hui-Xiong)
;
Li SS (Li Shu-Shen)
;
Li JB (Li Jingbo)
;
Li, JB, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail Address: jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:79/17
  |  
提交时间:2010/04/13
1ST-PRINCIPLES CALCULATIONS
1st-principles Calculations
Molecular-dynamics
Indium-phosphide
Exciton-states
Small Pbse
Nanocrystals
Photoluminescence
Generation
Nanowires
MOLECULAR-DYNAMICS
INDIUM-PHOSPHIDE
EXCITON-STATES
SMALL PBSE
NANOCRYSTALS
PHOTOLUMINESCENCE
GENERATION
NANOWIRES
Butt-coupled movpe growth for high-performance electro-absorption modulator integrated with a dfb laser
期刊论文
iSwitch采集
Journal of crystal growth, 2007, 卷号: 308, 期号: 2, 页码: 297-301
作者:
Cheng, YuanBing
;
Pan, JiaoQing
;
Liang, Song
;
Feng, Wen
;
Liao, Zaiyi
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Coupling efficiency
Butt-joint scheme
Metal-organic vapor phase epitaxy
Selective area growth (sag)
Semiconducting indium phosphide
Laser diodes
Thermally induced fe atom transition from substitutional to interstitial sites in inp and its influence on material property
期刊论文
iSwitch采集
Acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
作者:
Zhao You-Wen
;
Miao Shan-Shan
;
Dong Zhi-Yuan
;
Lue Xiao-Hong
;
Deng Ai-Hong
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Indium phosphide
Fe activation
Annealing
Semi-insulating
Generation and suppression of deep level defects in inp
期刊论文
iSwitch采集
Acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1476-1479
作者:
Zhao You-Wen
;
Dong Zhi-Yuan
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Indium phosphide
Annealing
Defect
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property
期刊论文
OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Zhao, YW (Zhao You-Wen)
;
Miao, SS (Miao Shan-Shan)
;
Dong, ZY (Dong Zhi-Yuan)
;
Lue, XH (Lue Xiao-Hong)
;
Deng, AH (Deng Ai-Hong)
;
Yang, J (Yang Jun)
;
Wang, B (Wang Bo)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/29
indium phosphide
Generation and suppression of deep level defects in InP
期刊论文
OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1476-1479
Zhao YW (Zhao You-Wen)
;
Dong ZY (Dong Zhi-Yuan)
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/03/29
indium phosphide
Growth of high quality semi-insulating inp single crystal by suppression of compensation defects
期刊论文
iSwitch采集
Journal of rare earths, 2006, 卷号: 24, 页码: 75-77
作者:
Zhao, YW
;
Dong, ZY
;
Duan, ML
;
Sun, WR
;
Yang, ZX
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Indium phosphide
Defect
Semi-insualting
Electron irradiation-induced defects in inp pre-annealed at high temperature
期刊论文
iSwitch采集
Materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
作者:
Zhao, Y. W.
;
Dong, Z. Y.
;
Deng, A. H.
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/05/12
Indium phosphide
Defect
Irradiation