中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共10条,第1-10条 帮助

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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文  OAI收割
Optical Materials, 2018
作者:  
Yang, J.;  Liu, S.T.;  Du, G.T.;  Zhang, Y.T.;  Li, M.
  |  收藏  |  浏览/下载:71/0  |  提交时间:2019/03/27
The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文  OAI收割
Optical Materials, 2018, 卷号: 86, 页码: 460-463
作者:  
S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
  |  收藏  |  浏览/下载:16/0  |  提交时间:2019/11/19
Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文  OAI收割
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
作者:  
S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
  |  收藏  |  浏览/下载:17/0  |  提交时间:2019/11/19
Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文  OAI收割
Superlattices and Microstructures, 2017
作者:  
Liu, S.T.;  Yang, J.;  Zhao, D.G.;  Jiang, D.S.;  Liang, F.
  |  收藏  |  浏览/下载:26/0  |  提交时间:2018/02/05
Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割
Materials Technology, 2016
作者:  
Liang, F.;  Chen, P.;  Zhao, D.G.;  Jiang, D.S.;  Liu, Z.S.
收藏  |  浏览/下载:18/0  |  提交时间:2017/03/11
Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文  OAI收割
superlattices and microstructures, 2016, 卷号: 97, 页码: 186-192
X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载:34/0  |  提交时间:2017/03/10
Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文  OAI收割
chemical physics letters, 2016, 卷号: 651, 页码: 76-79
F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10
Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文  OAI收割
journal of alloys and compounds, 2016, 卷号: 681, 页码: 522-526
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; J.P. Liu; L.Q. Zhang; H. Yang; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载:20/0  |  提交时间:2017/03/10
Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文  OAI收割
journal of alloys and compounds, 2015, 卷号: 635, 期号: 2015, 页码: 82–86
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; H. Yang; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载:14/0  |  提交时间:2016/03/23
The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters 期刊论文  OAI收割
superlattices and microstructures, 2015, 卷号: 88, 页码: 50-55
W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; X. Li; F. Liang; J.P. Liu; S.M. Zhang; H. Yang; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载:27/0  |  提交时间:2016/03/23