机构

• 半导体研究所 [8]
• 苏州纳米技术与纳米仿... [1]

采集方式

• iSwitch采集 [6]
• OAI收割 [3]

内容类型

• 期刊论文 [9]

发表日期

• 2017 [1]
• 2008 [4]
• 2007 [4]

学科主题

• 半导体材料 [2]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer 期刊论文  OAI收割 AIP ADVANCES, 2017 作者:  Liu, Xinke;  Gu, Hong;  Li, Kuilong;  Guo, Lunchun;  Zhu, Deliang   |  收藏  |   Influence of aln buffer layer thickness on the properties of gan epilayer on si(111) by mocvd 期刊论文  iSwitch采集 Microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713 作者:  Luo, Weijun;  Wang, Xiaoliang;  Guo, Lunchun;  Mao, Hongling;  Wang, Cuimei 收藏  |   Growth and fabrication of algan/gan hemt based on si(111) substrates by mocvd 期刊论文  iSwitch采集 Microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111 作者:  Luo, Weijun;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimie;  Ran, Junxue 收藏  |   The effect of low temperature aln interlayers on the growth of gan epilayer on si (111) by mocvd 期刊论文  iSwitch采集 Superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159 作者:  Luo, Weijun;  Wang, Xiaoliang;  Guo, Lunchun;  Xiao, Hongling;  Wang, Cuimei 收藏  |   The influence of 1 nm aln interlayer on properties of the al0.3ga0.7n/aln/gan hemt structure 期刊论文  iSwitch采集 Microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781 作者:  Guo, Lunchun;  Wang, Xiaoliang;  Wang, Cuimei;  Mao, Hongling;  Ran, Junxue 收藏  |   The influence of internal electric fields on the transition energy of ingan/gan quantum well 期刊论文  iSwitch采集 Journal of crystal growth, 2007, 卷号: 298, 页码: 522-526 作者:  Guo, Lunchun;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Baozhu 收藏  |   Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 281-283 Liu Z (Liu Zhe); Wang XL (Wang Xiaoliang); Wang JX (Wang Junxi); Hu GX (Hu Guoxin); Guo LC (Guo Lunchun); Li JP (Li Jianping); Li JM (Li Jinmin); Zeng YP (Zeng Yiping) 收藏  |   Effects of buffer layers on the stress and morphology of gan epilayer grown on si substrate by mocvd 期刊论文  iSwitch采集 Journal of crystal growth, 2007, 卷号: 298, 页码: 281-283 作者:  Liu, Zhe;  Wang, Xiaoliang;  Wang, Junxi;  Hu, Guoxin;  Guo, Lunchun 收藏  |   The influence of internal electric fields on the transition energy of InGaN/gaN quantum well 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 522-526 Guo LC (Guo Lunchun); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Wang BZ (Wang Baozhu) 收藏  |