机构

• 半导体研究所 [5]

采集方式

• OAI收割 [3]
• iSwitch采集 [2]

内容类型

• 期刊论文 [5]

发表日期

• 2015 [1]
• 2014 [1]
• 2011 [1]
• 2010 [1]
• 2008 [1]

学科主题

• 半导体器件 [2]
• 半导体材料 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Green light emitting diode grown on thick strain-reducedGreen light emitting diode grown on thick strain-reduced GaN template 期刊论文  OAI收割 materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2015, 2015, 卷号: 29, 29, 页码: 357–361, 357–361 作者:  Jiankun Yang;  Tongbo Wei;  Qiang Hu;  Ziqiang Huo;  Baojuan Sun   |  收藏  |  浏览/下载：11/0  |  提交时间：2016/04/15 Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates 期刊论文  OAI收割 ieee photonics journal, IEEE PHOTONICS JOURNAL, 2014, 2014, 卷号: 6, 6, 期号: 6, 页码: 8200610, 8200610 作者:  Wei, Tongbo;  Zhang, Lian;  Ji, Xiaoli;  Wang, Junxi;  Huo, Ziqiang   |  收藏  |  浏览/下载：15/0  |  提交时间：2015/03/19 Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011 作者:     |  收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14 Carrier concentration  Etching  Gallium alloys  Optical properties  Point defects  Raman spectroscopy  Semiconducting gallium compounds  Vapor phase epitaxy  Vapors  Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors   Preparation and optical performance of freestanding gan thick films 期刊论文  iSwitch采集 Rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172 作者:  Hu Qiang;  Wei Tongbo;  Duan Ruifei;  Yang Jiankun;  Huo Ziqiang 收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12 Gan  Hvpe  Freestanding thick films  Stress release  Photoluminescence   Microstructure and optical properties of nonpolar m-plane gan films grown on m-plane sapphire by hydride vapor phase epitaxy 期刊论文  iSwitch采集 Japanese journal of applied physics, 2008, 卷号: 47, 期号: 5, 页码: 3346-3349 作者:  Wei, Tongbo;  Duan, Ruifei;  Wang, Junxi;  Li, Jinmin;  Huo, Ziqiang 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Hvpe  Gan  Sapphire  Nonpolar  Semipolar