中国科学院机构知识库网格系统: 检索

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	Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy 期刊论文 OAI收割半导体学报, 2004, 卷号: 25, 期号: 2, 页码: 121-125 Wang Xiaoliang; Hu Guoxin; Wang Junxi; Liu Xinyu; Liu Hongxin; Sun Dianzhao; Zeng Yiping; Qian He; Li Jinmin; Kong Meiying; Lin Lanying 收藏 \| 浏览/下载：30/0 \| 提交时间：2010/11/23
	Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100) 期刊论文 OAI收割半导体学报, 2003, 卷号: 24, 期号: 6, 页码: 567-573 Sun Guosheng; Sun Yanling; Wang Lei; Zhao Wanshun; Luo Muchang; Zhang Yongxing; Zeng Yiping; Li Jinmin; Lin Lanying 收藏 \| 浏览/下载：28/0 \| 提交时间：2010/11/23
	Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP 期刊论文 OAI收割半导体学报, 2002, 卷号: 23, 期号: 10, 页码: 1041-1045 Zhao Youwen; Luo Yilin; Feng Hanyuan; Beling C D; Lin Lanying 收藏 \| 浏览/下载：22/0 \| 提交时间：2010/11/23
	Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System 期刊论文 OAI收割半导体学报, 2002, 卷号: 23, 期号: 8, 页码: 800-804 Sun Guosheng; Wang Lei; Luo Muchang; Zhao Wanshun; Sun Dianzhao; Zeng Yiping; Li Jinmin; Lin Lanying 收藏 \| 浏览/下载：23/0 \| 提交时间：2010/11/23
	Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP 期刊论文 OAI收割半导体学报, 2002, 卷号: 23, 期号: 5, 页码: 455-458 Zhao Youwen; Sun Niefeng; S. Fung; C. D. Beling; Sun Tongnian; Lin Lanying 收藏 \| 浏览/下载：21/0 \| 提交时间：2010/11/23
	Preparation of Semi-Insulating Material by Annealing Undoped InP 期刊论文 OAI收割半导体学报, 2002, 卷号: 23, 期号: 3, 页码: 285-289 Zhao Youwen; Dong Hongwei; Jiao Jinghua; Zhao Jianqun; Lin Lanying; Sun Niefeng; Sun Tongnian 收藏 \| 浏览/下载：24/0 \| 提交时间：2010/11/23
	Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR 期刊论文 OAI收割半导体学报, 1994, 卷号: 15, 期号: 3, 页码: 217 Ma Zhenyu; Wang Qiyuan; Zan Yude; Cai Tianhai; Yu Yuanhuan; Lin Lanying 收藏 \| 浏览/下载：14/0 \| 提交时间：2010/11/23