中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共18条,第1-10条 帮助

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非挥发性阻变存储器件及其制备方法 专利  OAI收割
专利号: US10134983, 申请日期: 2018-11-20, 公开日期: 2016-08-11
作者:  
刘琦;  刘明;  孙海涛;  张科科;  龙世兵
  |  收藏  |  浏览/下载:41/0  |  提交时间:2019/03/27
Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices 期刊论文  OAI收割
Applied Physics Letters, 2018
作者:  
Wu QT(吴全潭);  Writam Banerjee;  Cao JC(曹劲琛);  Ji ZY(姬濯宇);  Li L(李泠)
  |  收藏  |  浏览/下载:26/0  |  提交时间:2019/04/12
Origin of negative resistance in anion migration controlled resistive memory 期刊论文  OAI收割
Appl. Phys. Lett., 2018
作者:  
Writam Banerjee;  Wu FC(伍法才);  Hu Y(胡媛);  Wu QT(吴全潭);  Wu ZH(吴祖恒)
  |  收藏  |  浏览/下载:17/0  |  提交时间:2019/04/18
Full imitation of synaptic metaplasticity based on memristor devices 期刊论文  OAI收割
Nanoscale, 2018
作者:  
Wu QT(吴全潭);  Luo Q(罗庆);  Writam Banerjee;  Cao JC(曹劲琛);  Zhang XM(张续猛)
  |  收藏  |  浏览/下载:25/0  |  提交时间:2019/04/12
Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule 期刊论文  OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018
作者:  
writam Banerjee;  Lu ND(卢年端);  Yang Y(杨阳);  Li L(李泠);  Lv HB(吕杭炳)
  |  收藏  |  浏览/下载:10/0  |  提交时间:2019/04/10
design of cmos compatible, high-speed, highly-stable complementary switching with multilevel operation in 3D vertically stacked novel HfO2/Al2O3/TiOx (HAT) RRAM 期刊论文  OAI收割
advanced electronic materials, 2018
作者:  
Writam Banerjee;  Zhang XM(张续猛);  Luo Q(罗庆);  Lv HB(吕杭炳);  Liu Q(刘琦)
  |  收藏  |  浏览/下载:12/0  |  提交时间:2019/04/18
Nanocrystals in Nonvolatile Memory 专著  OAI收割
:Pan Stanford Publishing Pte. Ltd., 2018
作者:  
Writam Banerjee;  Liu Q(刘琦)
  |  收藏  |  浏览/下载:15/0  |  提交时间:2019/05/23
Complementary Switching in 3D Resistive Memory Array 期刊论文  OAI收割
Advanced Electronic Materials, 2017
作者:  
Writam Banerjee;  Xu XX(许晓欣);  Lv HB(吕杭炳);  Liu Q(刘琦);  Long SB(龙世兵)
  |  收藏  |  浏览/下载:11/0  |  提交时间:2018/07/13
Electronic imitation of behavioral and psychological synaptic activities using TiOx,Al2O3-based memristor devices 期刊论文  OAI收割
Nanoscale, 2017
作者:  
Writam Banerjee;  Liu M(刘明);  Long SB(龙世兵);  Lv HB(吕杭炳);  Liu Q(刘琦)
  |  收藏  |  浏览/下载:11/0  |  提交时间:2018/07/12
Crystal that remembers, several ways to utilize nanocrystals in resistive switching memory 期刊论文  OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017
作者:  
Writam Banerjee;  Liu M(刘明);  Liu Q(刘琦);  Long SB(龙世兵);  Lv HB(吕杭炳)
  |  收藏  |  浏览/下载:13/0  |  提交时间:2018/07/12