中国科学院机构知识库网格系统: 检索

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	Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文 OAI收割 ieee transactions on electron devices, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648 Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene Yu-Jin; Su, Shaojian; Xue, Chunlai); Cheng, Buwen; Yeo, Yee-Chia 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/08/27
	Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文 OAI收割 solid-state electronics, 2013, 卷号: 83, 页码: 66-70 Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/08/27
	Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文 OAI收割 ieee electron device letters, 2013, 卷号: 34, 期号: 3, 页码: 339-341 Gong, Xiao; Han, Genquan; Bai, Fan; Su, Shaojian; Guo, Pengfei; Yang, Yue; Cheng, Ran; Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Pan, Jisheng; Zhang, Zheng; Tok, Eng Soon; Antoniadis, Dimitri; Yeo, Yee-Chia 收藏 \| 浏览/下载：33/0 \| 提交时间：2013/09/17
	Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文 OAI收割 Solid-State Electronics, Solid-State Electronics, 2013, 2013, 卷号: 83, 83, 页码: 66–70, 66–70 作者: Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo \| 收藏 \| 浏览/下载：35/0 \| 提交时间：2014/04/04
	Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文 OAI收割 digest of technical papers - symposium on vlsi technology, 2012, 页码: 97-98 Han, Genquan; Su, Shaojian; Wang, Lanxiang; Zhang, Zheng; Xue, Chunlai; Cheng, Buwen; Yeo, Yee-Chia; Wang, Wei; Gong, Xiao; Yang, Yue; Ivana; Guo, Pengfei; Guo, Cheng; Zhang, Guangze; Pan, Jisheng 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/05/07
	Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor 期刊论文 OAI收割 international symposium on vlsi technology, systems, and applications, proceedings, 2012, 页码: 6210151 Wang, Lanxiang; Han, Genquan; Su, Shaojian; Cheng, Buwen; Yeo, Yee-Chia; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Xue, Chunlai; Wang, Qiming 收藏 \| 浏览/下载：32/0 \| 提交时间：2013/05/07
	Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal 期刊论文 OAI收割 ieee electron device letters, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531 Wang LX (Wang, Lanxiang); Su SJ (Su, Shaojian); Wang W (Wang, Wei); Yang Y (Yang, Yue); Tong Y (Tong, Yi); Liu B (Liu, Bin); Guo PF (Guo, Pengfei); Gong X (Gong, Xiao); Zhang GZ (Zhang, Guangze); Xue CL (Xue, Chunlai); Cheng BW (Cheng, Buwen); Han GQ (Han, Genquan); Yeo YC (Yeo, Yee-Chia) 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/27
	Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs 期刊论文 OAI收割 electrochemical and solid-state letters, 2012, 卷号: 15, 期号: 6, 页码: h179-h181 Wang, Lanxiang; Han, Genquan; Su, Shaojian; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Liu, Bin; Kong, Eugene Yu-Jing; Xue, Chunlai; Wang, Qiming; Cheng, Buwen; Yeo, Yee-Chia 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/05/07
	High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules 期刊论文 OAI收割 technical digest- international electron devices meeting, iedm, 2011, 页码: 16.7.1-16.7.3 Han, Genquan; Su, Shaojian; Zhan, Chunlei; Zhou, Qian; Yang, Yue; Wang, Lanxiang; Guo, Pengfei; Wei, Wang; Wong, Choun Pei; Shen, Ze Xiang; Cheng, Buwen; Yeo, Yee-Chia 收藏 \| 浏览/下载：24/0 \| 提交时间：2012/06/13 Electron devices Germanium Tin