机构

• 近代物理研究所 [10]
• 微电子研究所 [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [12]

内容类型

• 会议论文 [6]
• 期刊论文 [6]

发表日期

• 2022 [1]
• 2018 [2]
• 2016 [1]
• 2015 [2]
• 2014 [3]
• 2013 [3]
• 更多

学科主题

筛选

浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Mechanism and Equivalence of Single Event Effects Induced by 14 MeV Neutrons in High-Speed QDR SRAM 期刊论文  OAI收割 APPLIED SCIENCES-BASEL, 2022, 卷号: 12, 期号: 19, 页码: 9685 作者:  Yang, Shaohua;  Zhang, Zhangang;  Lei, Zhifeng;  Tong, Teng;  Li, Xiaohui   |  收藏  |  浏览/下载：20/0  |  提交时间：2023/11/09 SEE  SBU  MCU  QDR-SRAM   The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018 作者:  Song Gu;  Jie Liu;  Jinshun Bi;  Fazhan Zhao;  zhangang Zhang   |  收藏  |  浏览/下载：16/0  |  提交时间：2019/04/12 The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 页码: 1091-1100 作者:  Gu, Song;  Liu, Jie;  Bi, Jinshun;  Zhao, Fazhan;  Zhang, Zhangang   |  收藏  |  浏览/下载：36/0  |  提交时间：2018/07/16 Energy dependence  heavy ions  nuclear reactions  silicon-on-insulator (SOI) technology  single event upset (SEU)   Monte-Carlo prediction of single-event characteristics of 65 nm CMOS SRAM under hundreds of MeV/n heavy-ions in space 会议论文  OAI收割 作者:  Zhang, Zhangang;  Lei, Zhifeng;  En, Yunfei;  Liu, Jie;  IEEE   |  收藏  |  浏览/下载：26/0  |  提交时间：2019/03/27 single event upset  static random access memory  Monte-Carlo  secondary electron  nuclear reaction   Single Event Effects in COTS Ferroelectric RAM Technologies 会议论文  OAI收割 作者:  Zhang, Zhangang;  Lei, Zhifeng;  Yang, Zhenlei;  Wang, Xiaohui;  Wang, Bin   |  收藏  |  浏览/下载：33/0  |  提交时间：2018/08/20 Influence of edge effects on single event upset susceptibility of SOI SRAMs 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2015, 卷号: 342, 页码: 286-291 作者:  Xi, Kai;  Liu, Gang;  Hou, Mingdong;  Geng, Chao;  Bi, Jinshun   |  收藏  |  浏览/下载：19/0  |  提交时间：2018/07/16 Single event upset  Edge effects  Sensitive region  CREME-MC simulation   Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 卷号: 61, 页码: 1459-1467 作者:  Luo, Jie;  Yao, Huijun;  Sun, Youmei;  Xi, Kai   |  收藏  |  浏览/下载：28/0  |  提交时间：2018/07/05 Bragg Peak  Ion Range  Silicon-on-insulator  Single Event Upset   Supply Voltage Dependence of Single Event Upset Sensitivity in Diverse SRAM Devices 会议论文  OAI收割 作者:  Su, Hong;  Zhang, Zhangang;  Lei, Zhifeng;  En, Yunfei;  Huang, Yun   |  收藏  |  浏览/下载：40/0  |  提交时间：2018/08/20 single event upset  supply voltage  static random access memeory  critical charge   Supply Voltage Dependence of Single Event Upset Sensitivity in Diverse SRAM Devices 会议论文  OAI收割 作者:  Liu, Tianqi;  Ji, CY;  En, YF;  Huang, Yun;  En, Yunfei   |  收藏  |  浏览/下载：34/0  |  提交时间：2018/08/20 single event upset  supply voltage  static random access memeory  critical charge   Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions 期刊论文  OAI收割 SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2013, 卷号: 56, 页码: 1120-1125 作者:  Zhang ZhanGang;  Liu Jie;  Geng Chao;  Mo Dan;  Yao HuiJun   |  收藏  |  浏览/下载：29/0  |  提交时间：2018/07/05 Seu Occurrence  Sensitive Volume  Critical Charge  Deposited Energy  Mufpsa