机构

• 半导体研究所 [14]
• 物理研究所 [1]
• 金属研究所 [1]
• 上海微系统与信息技术... [1]

采集方式

• OAI收割 [17]

内容类型

• 期刊论文 [16]
• 会议论文 [1]

发表日期

• 2011 [1]
• 2010 [2]
• 2006 [5]
• 2004 [1]
• 2003 [2]
• 2002 [2]
• 更多

学科主题

• 半导体物理 [9]
• 半导体材料 [3]
• Crystallog... [1]
• 光电子学 [1]
• 半导体器件 [1]

筛选

浏览/检索结果: 共17条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割 journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102 作者:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y   |  收藏  |  浏览/下载：35/0  |  提交时间：2012/01/06 1.3 MU-M  STRAIN RELIEF  LASERS  SUBSTRATE  PHOTOLUMINESCENCE  DISLOCATIONS  OPERATION  RANGE  1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range   Comparative Study on InAs/InGaAs Dots-in-a-Well Structure Grown on GaAs(311) B and (100) Substrates 期刊论文  OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 卷号: 10, 期号: 11, 页码: 7359 Wang, L; Li, MC; Xiong, M; Wang, WX; Gao, HC; Zhao, LC 收藏  |  浏览/下载：19/0  |  提交时间：2013/09/17 ASSEMBLED QUANTUM DOTS  1.3 MU-M  LASERS  (311)B   Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 107, 期号: 6, 页码: art. no. 063107 Xu DW; Tong CZ; Yoon SF; Zhao LJ; Ding Y; Fan WJ 收藏  |  浏览/下载：138/19  |  提交时间：2010/04/28 gallium arsenide  III-V semiconductors  indium compounds  quantum dot lasers  surface emitting lasers  DEPENDENT OUTPUT CHARACTERISTICS  SEMICONDUCTOR-LASERS  1.3-MU-M  VCSELS  WELL  CONFINEMENT  POWER   Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Fang, ZD (Fang, Zhidan); Gong, M (Gong, Meng); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：119/32  |  提交时间：2010/03/29 quantum dots  photoluminescence  combination layer  1.3 MU-M  LASERS  INALAS   MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198 Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 metamorphic  long wavelength  quantum dots  molecular beam epitaxy  MOLECULAR-BEAM EPITAXY  CHEMICAL-VAPOR-DEPOSITION  1.3 MU-M  GAAS  EMISSION  RANGE  ISLANDS  ARRAYS  LASERS   Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots 期刊论文  OAI收割 applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130 Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.) 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 photoluminescence  quantum dots  indium arsenide  1.3 MU-M  CHEMICAL-VAPOR-DEPOSITION  PHASE-EPITAXY  GAAS  LUMINESCENCE  SUBSTRATE  ISLANDS  DENSITY  LASERS  LAYER   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 期刊论文  OAI收割 thin solid films, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：67/0  |  提交时间：2010/04/11 time-resolved photoluminescence  InAs self-assembled QDs  migration of carriers  1.3 MU-M  DEPENDENT RADIATIVE DECAY  THERMAL REDISTRIBUTION  EXCITONS  RECOMBINATION  RELAXATION  LIFETIMES  EMISSION  EPITAXY  LASERS   Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures 期刊论文  OAI收割 journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79 Kong LM (Kong Lingmin); Cai JF (Cai Jiafa); Wu ZY (Wu Zhengyun); Gong Z (Gong Zheng); Fang ZD (Fang Zhidan); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载：66/0  |  提交时间：2010/04/11 InGaAs layer  InAs quantum dots  time-resolved PL spectra  1.3 MU-M  CARRIER DYNAMICS  LASERS  GROWTH  WAVELENGTH  EMISSION  ISLANDS  LAYERS  SIZE   Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 mu m 期刊论文  OAI收割 Semiconductor Science and Technology, 2004, 卷号: 19, 期号: 6, 页码: 742-746 J. Y. Jin; J. Shi; D. C. Tian 收藏  |  浏览/下载：29/0  |  提交时间：2012/04/14 differential gain  lasers  amplifiers  1.3-mu-m   Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文  OAI收割 chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063 Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC 收藏  |  浏览/下载：75/0  |  提交时间：2010/08/12 1.3 MU-M  MOLECULAR-BEAM EPITAXY  TEMPERATURE-DEPENDENCE  LASING CHARACTERISTICS  LASERS  WAVELENGTH  SEPARATION  LINEWIDTH  PROPERTY  GAIN