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	Research on attitude measurement precision of star sensor influenced by space radiation damage 会议论文 OAI收割 Beijing, PEOPLES R CHINA, DEC 03-05, 2019 作者: Feng, J (Feng Jie); Li, YD (Li Yudong); Guo, Q (Guo Qi) \| 收藏 \| 浏览/下载：33/0 \| 提交时间：2021/08/25 CCD image sensor CMOS image sensor performance degradation radiation damage star sensor
	Design and simulation of CMOS star sensor lens with large relative aperture and wide field (EI CONFERENCE) 会议论文 OAI收割 2011 International Conference on Electronic and Mechanical Engineering and Information Technology, EMEIT 2011, August 12, 2011 - August 14, 2011, Harbin, China Zhong X.; Jin G. 收藏 \| 浏览/下载：61/0 \| 提交时间：2013/03/25 A 50mm focal length F/1.25 Gaussian type optical system is designed in this paper which has 20field of view. Actual star image adding optical cross-talk effect of CMOS(Complementary Metal Oxide Semiconductor) detector is simulated by non-sequential ray tracing in ZEMAX optical design and analysis software to evaluate its performance. The distortion relative to image spot centriod is introduced and calculated by simulated star images which is less than 0.03% of lens in this paper. Thermal adaptability is discussed by opt-mechanic thermal analysis which shows the RMS spot radius of marginal filed changes less than 0.7m under 10C temperature gradient and changes less than 1m during homogeneous temperature changing from 40C to 40C. The results of analyses and simulations show the design of this lens can achieve the requirement of high precision CMOS star sensor well. 2011 IEEE.
	Finite-element study of strain field in strained-Si MOSFET 期刊论文 OAI收割 MICRON, 2009, 卷号: 40, 期号: 2, 页码: 274 Liu, HH; Duan, XF; Xu, QX 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/09/17 BEAM ELECTRON-DIFFRACTION HOLE MOBILITY ENHANCEMENT ELASTIC RELAXATION LAYER SUPERLATTICES EFFECT TRANSISTORS CMOS PERFORMANCE SILICON SPECIMENS PMOSFETS
	Finite-element study of strain field in strained-Si MOSFET 外文期刊 OAI收割 2009 作者: Liu, HH; Xu, QX; Duan, XF \| 收藏 \| 浏览/下载：20/0 \| 提交时间：2010/11/26 Beam Electron-diffraction Hole Mobility Enhancement Elastic Relaxation Layer Superlattices Effect Transistors Cmos Performance Silicon Specimens Pmosfets
	Design and optimization considerations for bulk gate-all-around nanowire MOSFETs 外文期刊 OAI收割 2009 作者: Cai, XW; Zhou, HJ; Xu, QX; Song, Y \| 收藏 \| 浏览/下载：22/0 \| 提交时间：2010/11/26 Device-simulation Cmos Devices Silicon Performance Transistors Fabrication Diameter Impact
	Concave-suspended high-Q solenoid inductors with an RFIC-compatible bulk-micromachining technology 期刊论文 OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 卷号: 54, 期号: 4, 页码: 882-885 Gu, L; Li, XX 收藏 \| 浏览/下载：22/0 \| 提交时间：2012/02/01 HIGH-PERFORMANCE INDUCTORS SPIRAL INDUCTORS CMOS PROCESS SILICON FABRICATION SUBSTRATE DESIGN COPPER
	Geometrical modulation transfer function of different active pixel of CMOS APS (EI CONFERENCE) 会议论文 OAI收割 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, November 2, 2005 - November 5, 2005, Zian, China 作者: Li J.; Liu J.; Liu J.; Liu J.; Li J. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 The geometrical Modulation Transfer Function (MTF) of CMOS APS (active pixel sensor) is analyzed in this paper. Advanced APS have been designed and fabricated where different pixel shapes such as square rectangle and L shape were placed because the amplifier circuit and other function circuits inter pixel of APS take up some pixel area. MTF is an important figure of merit in focal plane array imaging sensors. Research on analyzing the MTF for the proper pixel shape is currently in progress for a centroidal configuration of a target position. MTF will give us a more complete understanding of the tradeoffs opposed by the different pixel designs and by the signal processing conditions. Based on image sensor sampling and reconstructing model the MTF expression of any active pixel shape has been deduced in this paper. According to actual pixel shape three different active area pixels were analyzed they were square rectangle and L shape their Fill Factor (FF) is 30% 44% and 55% respectively. Results of simulation experiments indicate that different pixel geometrical characteristics contribute significantly to the figures of their MTF. Different geometrical shape of active sensitive area of pixel and different station in pixel would influence MTF figures. The analysis results are important in designing better APS pixel and more important in analyzing imaging system performance of APS subpixel precision system.
	A short-channel SOI RF power LDMOS technology with TiSi2 salicide on dual sidewalls with cutoff frequency f(T) similar to 19.3 GHz 外文期刊 OAI收割 2006 作者: Yang, R; Li, JF; Qian, H; Lo, GQ; Balasubramanian, N \| 收藏 \| 浏览/下载：17/0 \| 提交时间：2010/11/26 Thin-film Soi Device Mosfet Cmos Silicon Performance Analog