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• 半导体研究所 [10]
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• 大连化学物理研究所 [2]
• 长春光学精密机械与物... [1]
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• OAI收割 [20]

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• 期刊论文 [18]
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• 2022 [1]
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• 半导体材料 [4]
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浏览/检索结果: 共20条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Thickness-Dependent Polar Domain Evolution in Strained, Ultrathin PbTiO3 Films 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2022, 页码: 10 作者:  Gong, Feng-Hui;  Chen, Yu-Ting;  Zhu, Yin-Lian;  Tang, Yun-Long;  Zhang, Heng   |  收藏  |  浏览/下载：37/0  |  提交时间：2022/07/01 scanning transmission electron microscopy  critical thickness  a/c domain  meron  ultrathin PbTiO3 films   Emergent Ferroelectricity in Otherwise Nonferroelectric Oxides by Oxygen Vacancy Design at Heterointerfaces 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2020, 卷号: 12, 期号: 40, 页码: 45602-45610 作者:  He, Ri;  Lin, Jun Liang;  Liu, Qing;  Liao, Zhaoliang;  Shui, Lingling   |  收藏  |  浏览/下载：42/0  |  提交时间：2020/12/16 METAL-INSULATOR-TRANSITION  TOTAL-ENERGY CALCULATIONS  ELECTRIC-FIELD CONTROL  INDUCED POLARIZATION  CRITICAL THICKNESS  THIN-FILM  SRTIO3  SYMMETRY  DEFECTS  SUPERCONDUCTIVITY   Pressure tuned ferroelectric reentrance in nano-BaTiO3 ceramics 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 12 Zhu, JL; Lin, S; Feng, SM; Wang, LJ; Liu, QQ; Jin, CQ; Wang, XH; Zhong, CF; Li, LT; Cao, WW 收藏  |  浏览/下载：139/0  |  提交时间：2013/09/24 BARIUM-TITANATE CERAMICS  DIELECTRIC-PROPERTIES  CRITICAL THICKNESS  CRYSTAL-STRUCTURE  PARTICLE-SIZE  BATIO3  FILMS   Morphology transition of asymmetric polyetherimide flat sheet membranes with different thickness by wet phase-inversion process 期刊论文  OAI收割 separation and purification technology, 2010, 卷号: 74, 期号: 1, 页码: 119-129 作者:  Ren, Jizhong;  Zhou, Jingqian;  Deng, Maicun 收藏  |  浏览/下载：23/0  |  提交时间：2015/11/12 Membrane structure  Flat sheet membrane  Critical structure-transition thickness  Approaching ratio   Morphology transition of asymmetric flat sheet and thickness-gradient membranes by wet phase-inversion process 期刊论文  OAI收割 desalination, 2010, 卷号: 253, 期号: 1-3, 页码: 1-8 作者:  Ren, Jizhong;  Zhou, Jingqian;  Deng, Maicun 收藏  |  浏览/下载：29/0  |  提交时间：2015/11/12 Morphology transition  Flat sheet membrane  Thickness-gradient membrane  Critical structure-transition thickness   Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802 Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：35/0  |  提交时间：2010/11/02 InGaN  In-plane grazing incidence x-ray diffraction  reciprocal space mapping  biaxial strain  CRITICAL LAYER THICKNESS  OPTICAL-PROPERTIES  LATTICE-CONSTANTS  GAN  HETEROSTRUCTURES  ALLOYS  WELLS   A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文  OAI收割 applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356 作者:  Wei HY;  Song HP 收藏  |  浏览/下载：144/13  |  提交时间：2010/04/22 MOVPE  In-rich InGaN  Indium incorporation  MOLECULAR-BEAM EPITAXY  CHEMICAL-VAPOR-DEPOSITION  CRITICAL THICKNESS  DROPLET FORMATION  PHASE-SEPARATION  TEMPERATURE  FILMS  HETEROSTRUCTURES  IMMISCIBILITY  INXGA1-XN   Investigation of the strain relaxation and ageing effect of YBa2Cu3O7-delta thin films grown on silicon-on-insulator substrates with yttria-stabilized zirconia buffer layers 期刊论文  OAI收割 SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2006, 卷号: 19, 期号: 1, 页码: 51 Wang, P; Li, J; Peng, W; Chen, YF; Zheng, DN 收藏  |  浏览/下载：26/0  |  提交时间：2013/09/18 BA-CU-O  PULSED-LASER DEPOSITION  SUPERCONDUCTING FILMS  CRITICAL THICKNESS  EPITAXIAL-GROWTH  SI  SRTIO3  MGO   Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文  OAI收割 Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time  the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration  the size of dots becomes larger and the density decreases  which is explained by virtue of the surface free energy.   Thickness-dependent structural transformation in the AlN film 期刊论文  OAI收割 Acta Materialia, 2005, 卷号: 53, 期号: 19, 页码: 5223-5227 D. Chen; X. L. Ma; Y. M. Wang 收藏  |  浏览/下载：23/0  |  提交时间：2012/04/14 epitaxially stabilized  AlN structural transformation  critical  thickness  chemical potential concepts  bond-valence parameters  aln/tin  superlattices  aluminum nitride  atomistic simulations  molecular-dynamics  ionic-crystals  cubic aln  density  phase