中国科学院机构知识库网格系统: 检索

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	Fabricating Quasi-Free-Standing Graphene on a SiC(0001) Surface by Steerable Intercalation of Iron 期刊论文 OAI收割 JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 卷号: 122, 期号: 37, 页码: 21484-21492 作者: Shen, KC; Sun, HL; Hu, JP; Hu, HB; Liang, ZF \| 收藏 \| 浏览/下载：17/0 \| 提交时间：2019/12/17 EPITAXIAL-GRAPHENE ELECTRONIC-PROPERTIES SILICON-CARBIDE HIGH-QUALITY GROWTH SEMICONDUCTOR TRANSISTORS GRAPHITE SINGLE LAYERS
	Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum 期刊论文 OAI收割 Nature Communications, 2012, 卷号: 3 L. B. Gao; W. C. Ren; H. L. Xu; L. Jin; Z. X. Wang; T. Ma; L. P. Ma; Z. Y. Zhang; Q. Fu; L. M. Peng; X. H. Bao; H. M. Cheng 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/02/05 chemical-vapor-deposition large-area epitaxial graphene copper catalyst films carbon layers foils cu
	Spatial hole burning degradation of algaas/gaas laser diodes 期刊论文 iSwitch采集 Applied physics letters, 2011, 卷号: 99, 期号: 10, 页码: 3 作者: Qiao, Y. B.; Feng, S. W.; Xiong, C.; Wang, X. W.; Ma, X. Y. 收藏 \| 浏览/下载：38/0 \| 提交时间：2019/05/12 Aluminium compounds Carrier density Cathodoluminescence Gallium arsenide Iii-v semiconductors Optical hole burning Optical microscopy Quantum well lasers Semiconductor epitaxial layers X-ray diffraction
	A practical route towards fabricating GaN nanowire arrays 期刊论文 OAI收割 crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935 Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H 收藏 \| 浏览/下载：34/0 \| 提交时间：2012/02/06 LIGHT-EMITTING-DIODES EPITAXIAL LATERAL OVERGROWTH CHEMICAL-VAPOR-DEPOSITION WELL NANOROD ARRAYS ULTRAVIOLET-LIGHT GROWTH NANOGENERATORS DISLOCATIONS BRIGHTNESS LAYERS
	Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文 OAI收割 chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102 Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG 收藏 \| 浏览/下载：55/4 \| 提交时间：2011/07/05 EPITAXIAL LAYERS PHOTOLUMINESCENCE ABSORPTION CARBON BAND
	Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文 OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者: He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying \| 收藏 \| 浏览/下载：82/0 \| 提交时间：2012/06/14 Atomic force microscopy Buffer layers Epitaxial growth Gallium alloys Gallium arsenide Germanium Growth temperature High resolution transmission electron microscopy Molecular beam epitaxy Molecular beams Semiconducting gallium Semiconductor device structures Semiconductor quantum wells Atomic Force Microscopy Buffer Layers Epitaxial Growth Gallium Alloys Gallium Arsenide Germanium Growth Temperature High Resolution Transmission Electron Microscopy Molecular Beam Epitaxy Molecular Beams Semiconducting Gallium Semiconductor Device Structures Semiconductor Quantum Wells
	Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn 期刊论文 OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 316, 316, 期号: 1, 页码: 145-148, 145-148 作者: Yang GD; Zhu F; Dong S; Yang, GD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. guandongyang@gmail.com \| 收藏 \| 浏览/下载：82/2 \| 提交时间：2011/07/05 Diffusion Physical vapor deposition processes Magnetic materials Semiconducting III-V materials GASB/MN DIGITAL ALLOYS ROOM-TEMPERATURE FERROMAGNETISM RAMAN-SCATTERING MAGNETOTRANSPORT PROPERTIES EPITAXIAL LAYERS THIN-FILMS SEMICONDUCTORS STRAIN MAGNETOELECTRONICS SPINTRONICS Diffusion Physical Vapor Deposition Processes Magnetic Materials Semiconducting Iii-v Materials Gasb/mn Digital Alloys Room-temperature Ferromagnetism Raman-scattering Magnetotransport Properties Epitaxial Layers Thin-films Semiconductors Strain Magnetoelectronics Spintronics
	Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文 OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者: Zhang, Yu; Wang, Guowei; Tang, Bao; Xu, Yingqiang; Xu, Yun \| 收藏 \| 浏览/下载：33/0 \| 提交时间：2012/06/14 Buffer layers Epitaxial growth Gallium alloys Indium antimonides Molecular beam epitaxy Molecular beams Optical waveguides Optimization Semiconducting gallium arsenide Semiconductor quantum wells Tellurium Tellurium compounds Buffer Layers Epitaxial Growth Gallium Alloys Indium Antimonides Molecular Beam Epitaxy Molecular Beams Optical Waveguides Optimization Semiconducting Gallium Arsenide Semiconductor Quantum Wells Tellurium Tellurium Compounds
	Magnetic anisotropies of laterally confined structures of epitaxial fe films on gaas (001) 期刊论文 iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 7, 页码: 3 作者: Meng, K. K.; Lu, J.; Wang, S. L.; Meng, H. J.; Zhao, J. H. 收藏 \| 浏览/下载：36/0 \| 提交时间：2019/05/12 Gallium arsenide Iron Magnetic anisotropy Magnetic epitaxial layers Molecular beam epitaxial growth