机构

• 半导体研究所 [5]
• 长春光学精密机械与物... [3]
• 西安光学精密机械研究... [3]
• 物理研究所 [2]
• 金属研究所 [2]
• 上海光学精密机械研究... [2]
• 更多

采集方式

• OAI收割 [20]
• iSwitch采集 [1]

内容类型

• 期刊论文 [17]
• 会议论文 [4]

发表日期

• 2018 [1]
• 2016 [2]
• 2015 [1]
• 2014 [1]
• 2012 [1]
• 2011 [2]
• 更多

学科主题

• 半导体材料 [2]
• 半导体物理 [2]
• Physics [1]
• 光学;量子光学 [1]
• 电子、电信技术 [1]

筛选

浏览/检索结果: 共21条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 VSC-doping and VSU-doping of Na3V2-xTix(PO4)(2)F-3 compounds for sodium ion battery cathodes: Analysis of electrochemical performance and kinetic properties 期刊论文  OAI收割 NANO ENERGY, 2018, 卷号: 47, 页码: 340-352 作者:  Zhang, Huamin;  Ling, Moxiang;  Xu, Wenbin;  Zheng, Qiong;  Li, Xianfeng   |  收藏  |  浏览/下载：46/0  |  提交时间：2019/06/20 Na3v2(Po4)(2)F-3  Ti Doping  Electrochemical Performance  Kinetic Properties  Electron Conduction  Sodium Ion diffusIon   Numerical analysis of the surface-conduction electron-emitter with a new configuration 期刊论文  OAI收割 modern physics letters b, 2016, 卷号: 30, 期号: 10 作者:  Shen, Zhihua;  Wang, Xiao;  Wu, Shengli;  Tian, Jinshou 收藏  |  浏览/下载：15/0  |  提交时间：2017/03/14 Surface-conduction electron-emitter  finite integration technique   Analysis of the influence of nanofissure morphology on the performance of surface-conduction electron emitters 期刊论文  OAI收割 journal of micromechanics and microengineering, 2016, 卷号: 26, 期号: 4 作者:  Shen, Zhihua;  Wang, Xiao;  Wu, Shengli;  Tian, JinShou 收藏  |  浏览/下载：23/0  |  提交时间：2016/09/14 finite integration technique (FIT)  nanometer-scale fissure  surface-conduction electron emitter   Numerical simulation of surface-conduction electron-emitter 会议论文  OAI收割 16th ieee international vacuum electronics conference, ivec 2015, beijing, china, 2015-04-27 作者:  Shen, Zhihua;  Wang, Xiao;  Wu, Shengli;  Tian, Jinshou 收藏  |  浏览/下载：20/0  |  提交时间：2016/02/02 Electron emitter  numerical simulation  CST particle studio  surface-conduction electron-emission   Atomic-scale mapping of dipole frustration at 90 degrees charged domain walls in ferroelectric PbTiO3 films 期刊论文  OAI收割 Scientific Reports, 2014, 卷号: 4 Y. L. Tang; Y. L. Zhu; Y. J. Wang; W. Y. Wang; Y. B. Xu; W. J. Ren; Z. D. Zhang; X. L. Ma 收藏  |  浏览/下载：22/0  |  提交时间：2014/03/14 transmission electron-microscopy  thin-films  force microscopy  image-analysis  polarization  strain  180-degrees  conduction  thickness  crystals   Vlasov-Fokker-Planck Simulations for High-Power Laser-Plasma Interactions 期刊论文  OAI收割 COMMUNICATIONS IN COMPUTATIONAL PHYSICS, 2012, 卷号: 11, 期号: 4, 页码: 1236 Weng, SM; Sheng, ZM; Xu, H; Zhang, J 收藏  |  浏览/下载：39/0  |  提交时间：2013/09/23 ELECTRON THERMAL CONDUCTION  STEEP TEMPERATURE-GRADIENTS  FULLY IONIZED GAS  INVERSE BREMSSTRAHLUNG  NUMERICAL-SOLUTION  ENERGY-TRANSPORT  HEAT-TRANSPORT  FAST IGNITION  ION RUNAWAY  FUSION   Synthesis and conductivity of GdPO(4) nanorods: Impacts of particle size and Ca(2+) doping 期刊论文  OAI收割 Journal of Alloys and Compounds, 2011, 卷号: 509, 期号: 10, 页码: 4160-4166 H. Wang; G. S. Li; X. F. Guan; L. P. Li 收藏  |  浏览/下载：26/0  |  提交时间：2012/06/06 Nanostructured materials  Chemical synthesis  Electrical transport  Impedance spectroscopy  Transmission electron microscopy  X-ray  diffraction  rare-earth orthophosphates  temperature protonic conduction  phosphoric-acid solution  sr-doped lapo4  electrical-transport  systematic synthesis  reducing conditions  optical-properties  vanadyl  phosphate  cdse nanocrystals   Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文  OAI收割 作者:  Chen X.;  Liu L.;  Liu L.;  Li B.;  Li B. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.   Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文  OAI收割 nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343 Liu JM (Liu J. M.); Liu XL (Liu X. L.); Xu XQ (Xu X. Q.); Wang J (Wang J.); Li CM (Li C. M.); Wei HY (Wei H. Y.); Yang SY (Yang S. Y.); Zhu QS (Zhu Q. S.); Fan YM (Fan Y. M.); Zhang XW (Zhang X. W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：157/21  |  提交时间：2010/08/17 Valence band offset  w-InN/h-BN heterojunction  X-ray photoelectron spectroscopy  Conduction band offset  Valence band offset  NEGATIVE ELECTRON-AFFINITY  INDIUM NITRIDE  WURTZITE GAN  SURFACE  FILM  ALN  TRANSPORT  EMISSION  NAXWO3  GROWTH   Determination of mgo/aln heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文  iSwitch采集 Applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: 3 作者:  Yang, A. L.;  Song, H. P.;  Liu, X. L.;  Wei, H. Y.;  Guo, Y. 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Aluminium compounds  Conduction bands  Energy gap  High electron mobility transistors  Iii-v semiconductors  Magnesium compounds  Passivation  Semiconductor heterojunctions  Valence bands  Wide band gap semiconductors  X-ray photoelectron spectra