机构

• 半导体研究所 [6]
• 物理研究所 [4]
• 上海微系统与信息技术... [2]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [13]

内容类型

• 期刊论文 [12]
• 会议论文 [1]

发表日期

• 2008 [2]
• 2006 [3]
• 2003 [6]
• 1998 [2]

学科主题

• 半导体材料 [5]
• Electroche... [1]
• Materials ... [1]
• 光电子学 [1]

筛选

浏览/检索结果: 共13条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation V/III Ratio 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 12, 页码: 4449 Zhang, J; Guo, LW; Xing, ZG; Ge, BH; Ding, GJ; Peng, MZ; Jia, HQ; Zhou, JM; Chen, H 收藏  |  浏览/下载：23/0  |  提交时间：2013/09/17 LIGHT-EMITTING-DIODES  X-RAY-DIFFRACTION  ALGAN LAYERS  HIGH-QUALITY  GAN FILMS  SAPPHIRE  OPERATION   Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy 期刊论文  OAI收割 ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 卷号: 11, 期号: 10, 页码: H273-H275 Wang, XZ; Yu, GH; Lin, CT; Cao, MX; Gong, H; Qi, M; Li, AZ 收藏  |  浏览/下载：22/0  |  提交时间：2012/03/24 HIGH-QUALITY GAN  PLANE SAPPHIRE  POROUS GAN  FILMS  NANOHETEROEPITAXY  FABRICATION  EPILAYERS  LAYERS  SI   Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.   Effect of AlN intermediate layer on growing GaN film by hydride vapor phase epitaxy 期刊论文  OAI收割 RARE METALS, 2006, 卷号: 25, 页码: 15-19 Lin, CT; Yu, GH; Lei, BL; Wang, XZ; Ye, HH; Meng, S; Qi, M; Li, AZ; Nouet, G; Ruterana, P; Chen, J 收藏  |  浏览/下载：18/0  |  提交时间：2012/03/24 HIGH-QUALITY GAN  BUFFER LAYER  GROWTH  DEPOSITION  MORPHOLOGY  EVOLUTION  SAPPHIRE   Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文  OAI收割 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594 Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  HIGH-QUALITY GAN  ALN BUFFER LAYER  NUCLEATION LAYER  PHASE EPITAXY  EVOLUTION  DENSITY  SILICON  STRESS  SI   Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE LETTERS, 2003, 卷号: 22, 期号: 22, 页码: 1581 Hu, GQ; Kong, X; Wang, YQ; Wan, L; Duan, XF; Lu, Y; Liu, XL 收藏  |  浏览/下载：20/0  |  提交时间：2013/09/17 MOLECULAR-BEAM EPITAXY  HIGH-QUALITY GAN  HETEROEPITAXIAL GROWTH  HETEROSTRUCTURES   Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 3-4, 页码: 416 Hu, GQ; Kong, X; Wan, L; Wang, YQ; Duan, XF; Lu, Y; Liu, XL 收藏  |  浏览/下载：28/0  |  提交时间：2013/09/18 MOLECULAR-BEAM EPITAXY  HIGH-QUALITY GAN  HETEROEPITAXIAL GROWTH  ELECTRON-DIFFRACTION  DEFECT STRUCTURE  HETEROSTRUCTURE  DISLOCATIONS  MICROSCOPY  (111)SI  LAYER   Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352 作者:  Zhang SM 收藏  |  浏览/下载：240/30  |  提交时间：2010/08/12 in situ laser reflectometry  lateral overgrowth  metalorganic chemical vapor deposition  GaN  CHEMICAL-VAPOR-DEPOSITION  HIGH-QUALITY GAN  BUFFER LAYER  THREADING DISLOCATIONS  TEMPERATURE  EVOLUTION  SURFACE  MOVPE   Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423 Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL 收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12 amorphous layer  dislocation  transmission electron microscopy  metalorganic chemical vapor deposition  GaN  MOLECULAR-BEAM EPITAXY  HIGH-QUALITY GAN  HETEROEPITAXIAL GROWTH  ELECTRON-DIFFRACTION  DEFECT STRUCTURE  HETEROSTRUCTURE  DISLOCATIONS  MICROSCOPY  (111)SI  LAYER   Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40 作者:  Zhao DG 收藏  |  浏览/下载：312/12  |  提交时间：2010/08/12 metalorganic chemical vapor deposition  nitrides  semiconductor III-V materials  MOLECULAR-BEAM EPITAXY  HIGH-QUALITY GAN  CHEMICAL-VAPOR-DEPOSITION  INTERMEDIATE LAYER  ALAS  ALN  SURFACES  SILICON  FILMS