机构

• 半导体研究所 [6]
• 物理研究所 [4]
• 上海微系统与信息技术... [2]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [13]

内容类型

• 期刊论文 [12]
• 会议论文 [1]

发表日期

• 2008 [2]
• 2006 [3]
• 2003 [6]
• 1998 [2]

学科主题

• 半导体材料 [5]
• Electroche... [1]
• Materials ... [1]
• 光电子学 [1]

筛选

浏览/检索结果: 共13条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation V/III Ratio 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 12, 页码: 4449 Zhang, J; Guo, LW; Xing, ZG; Ge, BH; Ding, GJ; Peng, MZ; Jia, HQ; Zhou, JM; Chen, H 收藏  |   Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy 期刊论文  OAI收割 ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 卷号: 11, 期号: 10, 页码: H273-H275 Wang, XZ; Yu, GH; Lin, CT; Cao, MX; Gong, H; Qi, M; Li, AZ 收藏  |   Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |   Effect of AlN intermediate layer on growing GaN film by hydride vapor phase epitaxy 期刊论文  OAI收割 RARE METALS, 2006, 卷号: 25, 页码: 15-19 Lin, CT; Yu, GH; Lei, BL; Wang, XZ; Ye, HH; Meng, S; Qi, M; Li, AZ; Nouet, G; Ruterana, P; Chen, J 收藏  |   Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文  OAI收割 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594 Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) 收藏  |   Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE LETTERS, 2003, 卷号: 22, 期号: 22, 页码: 1581 Hu, GQ; Kong, X; Wang, YQ; Wan, L; Duan, XF; Lu, Y; Liu, XL 收藏  |   Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 3-4, 页码: 416 Hu, GQ; Kong, X; Wan, L; Wang, YQ; Duan, XF; Lu, Y; Liu, XL 收藏  |   Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352 作者:  Zhang SM 收藏  |   Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423 Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL 收藏  |   Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40 作者:  Zhao DG 收藏  |