中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共14条,第1-10条 帮助

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Implantation temperature and thermal annealing behavior in H-2(+)-implanted 6H-SiC 期刊论文  OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 卷号: 316, 页码: 239-244
作者:  
Li, B. S.;  Wang, Z. G.;  Jin, J. F.
  |  收藏  |  浏览/下载:34/0  |  提交时间:2018/07/05
EFFECT OF HEAT TREATMENT ON MICROSTRUCTURE AND MAGNETOSTRICTIVE PROPERTY OF MELT-SPUN Fe85Ga15 RIBBONS 期刊论文  OAI收割
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2013, 卷号: 27, 期号: 30, 页码: 1350174
作者:  
Liu, H;  Wang, HO;  Cao, MX;  Tan, WS
收藏  |  浏览/下载:20/0  |  提交时间:2016/04/08
Lattice damage and nanohardness in 6H-SiC implanted with multiple-energy Xe ions 会议论文  OAI收割
作者:  
Jia, X. J.;  Jin, Y. F.;  Li, J. Y.;  Song, Y.;  Xu, C. L.
  |  收藏  |  浏览/下载:33/0  |  提交时间:2018/08/20
A HRXRD and nano-indentation study on Ne-implanted 6H-SiC 会议论文  OAI收割
作者:  
Li, J. J.;  Zhang, L. Q.;  Yang, Y. T.;  Song, Y.;  Jia, X. J.
  |  收藏  |  浏览/下载:171/0  |  提交时间:2018/08/20
荷能Xe 离子注入SiC 中缺陷和力学性能演化行为的研究 学位论文  OAI收割
北京: 中国科学院研究生院, 2012
作者:  
李健健
  |  收藏  |  浏览/下载:36/0  |  提交时间:2015/10/28
Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions 期刊论文  OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 卷号: 269, 期号: 15, 页码: 1782-1785
作者:  
Li, B. S.;  Zhang, L. M.;  Zhang, C. H.;  Zhang, L. Q.;  Jia, X. J.
  |  收藏  |  浏览/下载:22/0  |  提交时间:2015/10/15
HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions 期刊论文  OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 卷号: 269, 期号: 10, 页码: 1063-1066
作者:  
Jia, X. J.;  Zhang, L. Q.;  Jin, Y. F.;  Zhang, Y.;  Han, L. H.
  |  收藏  |  浏览/下载:34/0  |  提交时间:2015/10/15
Growth of (10(1)over-bar(3)over-bar) semipolar gan on m-plane sapphire by hydride vapor phase epitaxy 期刊论文  iSwitch采集
Journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
作者:  
Wei, T. B.;  Hu, Q.;  Duan, R. F.;  Wei, X. C.;  Huo, Z. Q.
收藏  |  浏览/下载:39/0  |  提交时间:2019/05/12