机构

• 近代物理研究所 [20]
• 高能物理研究所 [2]
• 物理研究所 [1]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [23]
• iSwitch采集 [1]

内容类型

• 期刊论文 [20]
• 会议论文 [4]

发表日期

• 2021 [2]
• 2020 [2]
• 2019 [2]
• 2018 [2]
• 2017 [4]
• 2015 [2]
• 更多

学科主题

• Instrument... [1]

筛选

浏览/检索结果: 共24条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The effect of cavities on recrystallization growth of high-fluence He implanted-SiC 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2021, 卷号: 509, 页码: 68-72 作者:  Zhang, Tongmin;  He, Xiaoxun;  Chen, Limin;  Li, Jun;  Liao, Qing   |  收藏  |  浏览/下载：93/0  |  提交时间：2022/01/07 He implantation  Recrystallization  Microstructure  6H-SiC   Near-surface investigation of positron diffusion length in helium-implanted Fe9Cr and its ODS variant 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2021, 卷号: 538, 页码: 5 作者:  Degmova, Jarmila;  Krsjak, Vladimir;  Shen, Tielong;  Veternikova, Jana Simeg;  Gatciova, Andrea   |  收藏  |  浏览/下载：33/0  |  提交时间：2021/12/13 F/m steels  He+ implantation  Slow positron Doppler broadening technique  Positron diffusion length   Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 degrees C* 期刊论文  OAI收割 CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 7, 页码: 7 作者:  Liao, Qing;  Li, Bingsheng;  Kang, Long;  Li, Xiaogang   |  收藏  |  浏览/下载：22/0  |  提交时间：2021/12/15 He implantation  cavities  extended defects  transmission electron microscopy  recrystallization   Lattice disorder and N elemental segregation in ion implanted GaN epilayer 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2020, 卷号: 499, 页码: 9 作者:  Li, B. S.;  Liu, H. P.;  Xu, L. J.;  Wang, J.;  Song, J.   |  收藏  |  浏览/下载：26/0  |  提交时间：2022/01/19 He implantation  Lattice disorder  GaN  Transmission electron microscopy  Dislocation loops   Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 454, 页码: 45-49 作者:  Li, Bingsheng;  Liu, Yuzhu;  Liu, Huiping;  Kang, Long;  Xiong, Anli   |  收藏  |  浏览/下载：61/0  |  提交时间：2019/11/10 GaN  He ion implantation  Microstructure  Extended defects   Damage and recovery behavior of 4H-SiC implanted with He ions 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 449, 页码: 54-57 作者:  Zhang, Chonghong;  Yang, Yitao;  Su, Changhao;  Ding, Zhaonan;  Song, Yin   |  收藏  |  浏览/下载：111/0  |  提交时间：2019/11/10 4H-SiC  He ions implantation  Nanoindentation  Raman  Graphite  Thermal annealing   Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 degrees C 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2018, 卷号: 455, 页码: 433-437 作者:  Han, W. T.;  Liu, H. P.;  Li, B. S.   |  收藏  |  浏览/下载：25/0  |  提交时间：2018/10/08 He implantation  Si  Transmission electron microscopy  Cavities  Frank loops   Characterization of dose dependent mechanical properties in helium implanted tungsten 期刊论文  OAI收割 JOURNAL OF NUCLEAR MATERIALS, 2018, 卷号: 509, 页码: 260-266 作者:  Cao, XZ;  Chen, WQ;  Wang, XY;  Xiao, XZ;  Qu, SL   |  收藏  |  浏览/下载：68/0  |  提交时间：2019/09/24 Tungsten  He implantation  Mechanical properties  Spherical nanoindentation  Molecular dynamics   Lattice disorder produced in GaN by He-ion implantation 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 卷号: 406, 页码: 543-547 作者:  Zhang, Li;  Fang, Xuesong;  Zhao, Sixiang;  Jin, Jin;  Huang, Yuxuan   |  收藏  |  浏览/下载：45/0  |  提交时间：2018/05/31 He-ion implantation  GaN  Microstructure  Lattice disorder  Lattice strain   Lattice disorder produced in GaN by He-ion implantation 会议论文  OAI收割 作者:  Luo, Peng;  Sheng, Yanbin;  Zhang, Hongpeng   |  收藏  |  浏览/下载：45/0  |  提交时间：2018/08/20 He-ion implantation  GaN  Microstructure  Lattice disorder  Lattice strain