中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共31条,第1-10条 帮助

条数/页: 排序方式:
Astute Video Transmission for Geographically Dispersed Devices in Visual IoT Systems 期刊论文  OAI收割
IEEE TRANSACTIONS ON MOBILE COMPUTING, 2022, 卷号: 21, 期号: 2, 页码: 448-464
作者:  
Ji, Wen
  |  收藏  |  浏览/下载:31/0  |  提交时间:2022/12/07
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文  OAI收割
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:  
Z.M.Shi;  X.J.Sun;  Y.P.Jia;  X.K.Liu;  S.L.Zhang
  |  收藏  |  浏览/下载:48/0  |  提交时间:2020/08/24
300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio 期刊论文  OAI收割
ELECTRONICS LETTERS, 2014, 卷号: 50, 期号: 4, 页码: 315-U161
作者:  
Cai, Y (蔡勇)
收藏  |  浏览/下载:18/0  |  提交时间:2015/02/03
Spectrum Analysis of 2-D Plasmon in GaN-Based High Electron Mobility Transistors 期刊论文  OAI收割
IEEE J SEL TOP QUANT, 2013, 卷号: 19, 期号: 1
LinWang; Xiao-ShuangChen; Wei-DaHu; WeiLu
收藏  |  浏览/下载:28/0  |  提交时间:2014/11/10
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文  OAI收割
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:  
Shi K;  Jiao CM;  Song HP
收藏  |  浏览/下载:105/7  |  提交时间:2011/07/05
Electron mobility in modulation-doped AlSb/InAs quantum wells 期刊论文  OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.73703
作者:  
Zhang Y;  Li YB
收藏  |  浏览/下载:62/5  |  提交时间:2011/07/05
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文  OAI收割
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
收藏  |  浏览/下载:46/0  |  提交时间:2012/01/06
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文  OAI收割
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  
Bi Y;  Lin DF;  Peng EC
收藏  |  浏览/下载:25/0  |  提交时间:2011/09/14
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文  OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo); Zhang Y (Zhang Yang); Zeng YP (Zeng Yiping)
收藏  |  浏览/下载:236/46  |  提交时间:2010/10/11
High-performance 2 mm gate width ganhemts on 6h-sic with output power of 22.4 w @ 8 ghz 期刊论文  iSwitch采集
Solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929
作者:  
Wang, X. L.;  Chen, T. S.;  Xiao, H. L.;  Wang, C. M.;  Hu, G. X.
收藏  |  浏览/下载:15/0  |  提交时间:2019/05/12