中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [21]
微电子研究所 [6]
计算技术研究所 [1]
苏州纳米技术与纳米仿... [1]
长春光学精密机械与物... [1]
上海技术物理研究所 [1]
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OAI收割 [28]
iSwitch采集 [3]
内容类型
期刊论文 [29]
会议论文 [2]
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2022 [1]
2019 [1]
2014 [1]
2013 [1]
2011 [4]
2010 [1]
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学科主题
半导体材料 [11]
半导体物理 [6]
光电子学 [1]
红外基础研究 [1]
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浏览/检索结果:
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Astute Video Transmission for Geographically Dispersed Devices in Visual IoT Systems
期刊论文
OAI收割
IEEE TRANSACTIONS ON MOBILE COMPUTING, 2022, 卷号: 21, 期号: 2, 页码: 448-464
作者:
Ji, Wen
  |  
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2022/12/07
Task analysis
Streaming media
Performance evaluation
Delays
Visualization
DH-HEMTs
Fractals
Video transmission
device hypergraph
submodular function
dispersed devices
optimization
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles
期刊论文
OAI收割
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:
Z.M.Shi
;
X.J.Sun
;
Y.P.Jia
;
X.K.Liu
;
S.L.Zhang
  |  
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics
300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio
期刊论文
OAI收割
ELECTRONICS LETTERS, 2014, 卷号: 50, 期号: 4, 页码: 315-U161
作者:
Cai, Y (蔡勇)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2015/02/03
CIRCUITS
HEMTS
Spectrum Analysis of 2-D Plasmon in GaN-Based High Electron Mobility Transistors
期刊论文
OAI收割
IEEE J SEL TOP QUANT, 2013, 卷号: 19, 期号: 1
LinWang
;
Xiao-ShuangChen
;
Wei-DaHu
;
WeiLu
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2014/11/10
Highelectronmobilitytransistors(HEMTs)
plasmonics
spectrum
terahertz(THz)detectors
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
期刊论文
OAI收割
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:
Shi K
;
Jiao CM
;
Song HP
收藏
  |  
浏览/下载:105/7
  |  
提交时间:2011/07/05
Valence band offset
GaN/diamond heterojunction
XPS
Conduction band offset
CHEMICAL-VAPOR-DEPOSITION
ALGAN/GAN HEMTS
DIAMOND
GAN
FILMS
Electron mobility in modulation-doped AlSb/InAs quantum wells
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.73703
作者:
Zhang Y
;
Li YB
收藏
  |  
浏览/下载:62/5
  |  
提交时间:2011/07/05
ACOUSTIC-PHONON-SCATTERING
LOW-POWER APPLICATIONS
TRANSPORT-PROPERTIES
INTERFACE ROUGHNESS
INAS/ALSB HEMTS
HETEROSTRUCTURES
INAS
TRANSISTORS
GAS
LAYERS
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure
期刊论文
OAI收割
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y
;
Wang XL
;
Xiao HL
;
Wang CM
;
Peng EC
;
Lin DF
;
Feng C
;
Jiang LJ
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2012/01/06
ALGAN/GAN/INGAN/GAN DH-HEMTS
FIELD-EFFECT TRANSISTORS
ALGAN/GAN
POLARIZATION
PASSIVATION
HFETS
GHZ
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
期刊论文
OAI收割
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:
Bi Y
;
Lin DF
;
Peng EC
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2011/09/14
2-DIMENSIONAL ELECTRON-GAS
ALGAN/GAN/INGAN/GAN DH-HEMTS
MILLIMETER-WAVE APPLICATIONS
FIELD-EFFECT TRANSISTORS
HETEROJUNCTION FETS
HETEROSTRUCTURES
PASSIVATION
CONFINEMENT
PERFORMANCE
BARRIERS
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo)
;
Zhang Y (Zhang Yang)
;
Zeng YP (Zeng Yiping)
收藏
  |  
浏览/下载:236/46
  |  
提交时间:2010/10/11
INAS/ALSB QUANTUM-WELLS
LOW-POWER APPLICATIONS
HEMTS
MODULATION
HETEROSTRUCTURES
TECHNOLOGY
CHANNEL
VOLTAGE
MASS
High-performance 2 mm gate width ganhemts on 6h-sic with output power of 22.4 w @ 8 ghz
期刊论文
iSwitch采集
Solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929
作者:
Wang, X. L.
;
Chen, T. S.
;
Xiao, H. L.
;
Wang, C. M.
;
Hu, G. X.
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Algan/aln/gan
Hemts
Sic
Power