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CAS IR Grid
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物理研究所 [4]
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OAI收割 [12]
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期刊论文 [10]
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Gettering layer for oxygen accumulation in the initial stage of SIMOX processing
期刊论文
OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 卷号: 267, 期号: 8-9, 页码: 1273-1276
Ou, X
;
Kogler, R
;
Skorupa, W
;
Moller, W
;
Wang, X
;
Gerlach, JW
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/03/24
LOW-DOSE SEPARATION
ON-INSULATOR MATERIAL
BURIED OXIDE
IMPLANTED SILICON
ENERGY
REGION
WAFERS
Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux
期刊论文
OAI收割
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 2007, 卷号: 264, 期号: 2, 页码: 272-276
S. B. Dun
;
T. C. Lu
;
Q. Hu
;
Y. W. Hu
;
C. F. You
;
S. B. Zhang
;
B. Tang
;
J. L. Dai
;
N. K. Huang
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2012/04/13
Ge nanocrystals
neutron transmutation doping
photoluminescence
Raman
scattering
doped si nanocrystals
electron-spin-resonance
semiconductor
nanocrystals
n-type
implanted sio2-films
silicon nanocrystals
porous
silicon
raman
luminescence
temperature
Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy
外文期刊
OAI收割
2005
作者:
Wang, QY
;
Wang, J
;
Wang, JH
;
Liu, ZL
;
Lin, LY
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/26
Silicon-on-sapphire
Implanted Silicon
Si
Fabrication
Improvement
Epitaxy
Growth
Layers
Effect of ion-induced defects and oxygen concentration in annealing atmosphere on formation of buried oxide layer in SIMOX materials
期刊论文
OAI收割
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 卷号: 20, 期号: 3, 页码: 305-309
Chen, J
;
Wang, X
;
Jin, B
;
Zhang, E
;
Sun, J
;
Wang, X
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2012/03/24
IMPLANTED SILICON
ISOTOPIC EXCHANGE
ON-INSULATOR
SI
TEMPERATURE
DIFFUSION
Characterization of 1.9-and 1.4-nm ultrathin gate oxynitride by oxidation of nitrogen-implanted silicon substrate
期刊论文
OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 卷号: 51, 期号: 1, 页码: 113-120
作者:
Xu, QX
;
Qian, H
;
Han, ZS
;
Lin, G
;
Liu, M
  |  
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2019/04/09
Boron Penetration
Micro-roughness Of Interface
Oxidation Of N-implanted Silicon Substrate
Oxidation Retardation
Tunneling Leakage
Ultrathin Gate Oxynitride
Photoluminescence from Ge-SiO2 thin films and its mechanism
期刊论文
OAI收割
CHINESE SCIENCE BULLETIN, 2001, 卷号: 46, 期号: 15, 页码: 1268-1271
Dong, YM
;
Chen, J
;
Tang, NY
;
Ye, CN
;
Wu, XM
;
Zhuge, LJ
;
Yao, WG
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2012/03/24
GE+-IMPLANTED SIO2-FILMS
QUANTUM-CONFINEMENT
GERMANIUM NANOCRYSTALS
SIO2 MATRIX
SILICON
LUMINESCENCE
BLUE
Effects of forming cavities on the lattice quality and carrier profile in the B doped silicon
期刊论文
OAI收割
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 卷号: 72, 期号: 2-3, 页码: 142
Wang, SB
;
Zhu, PR
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2013/09/17
ION-IMPLANTED SILICON
BORON-DIFFUSION
DEFECTS
The crystal structural evolution of nano-Si anode caused by lithium insertion and extraction at room temperature
期刊论文
OAI收割
SOLID STATE IONICS, 2000, 卷号: 135, 期号: 1-4, 页码: 181
Li, H
;
Huang, XJ
;
Chen, LQ
;
Zhou, GW
;
Zhang, Z
;
Yu, DP
;
Mo, YJ
;
Pei, N
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2013/09/23
ION-IMPLANTED SI
AMORPHIZATION PROCESSES
RECHARGEABLE BATTERIES
LASER-ABLATION
SILICON
NANOWIRES
ELECTRODES
LI
High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere
期刊论文
OAI收割
physical review b, 1999, 卷号: 59, 期号: 11, 页码: 7500-7506
Pajot B
;
Clerjaud B
;
Xu ZJ
收藏
  |  
浏览/下载:57/0
  |  
提交时间:2010/08/12
ION-IMPLANTED SILICON
UNIAXIAL-STRESS
ABSORPTION
NITROGEN
DEFECT
GERMANIUM
COMPLEXES
OXYGEN
LEVEL
BANDS
Preparation and characterization of erbium doped sol-gel silica glasses
会议论文
OAI收割
conference on rare-earth-doped materials and devices iii, san jose, ca, jan 27-28, 1999
Lei HB
;
Yang QQ
;
Ou HY
;
Chen BW
;
Yu JZ
;
Wang QM
;
Xie DT
;
Wu JG
;
Xu DF
;
Xu GX
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/10/29
Er-doped silica glass
sol-gel process
photoluminescence
PLANAR WAVE-GUIDES
MOLECULAR-BEAM EPITAXY
CRYSTAL SILICON
IMPLANTED SI
LUMINESCENCE
ELECTROLUMINESCENCE
FABRICATION
IMPURITIES
FILMS
IONS