机构

• 半导体研究所 [8]

采集方式

• iSwitch采集 [4]
• OAI收割 [4]

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浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序发表日期升序发表日期降序作者升序作者降序 Study on the thermal stability of inn by in-situ laser reflectance system 期刊论文  iSwitch采集 Journal of crystal growth, 2005, 卷号: 281, 期号: 2-4, 页码: 310-317 作者:  Huang, Y;  Wang, H;  Sun, Q;  Chen, J;  Wang, JF 收藏  |   Low-temperature growth of inn by mocvd and its characterization 期刊论文  iSwitch采集 Journal of crystal growth, 2005, 卷号: 276, 期号: 1-2, 页码: 13-18 作者:  Huang, Y;  Wang, H;  Sun, Q;  Chen, J;  Li, DY 收藏  |   Study on the thermal stability of InN by in-situ laser reflectance system 期刊论文  OAI收割 journal of crystal growth, 2005, 卷号: 281, 期号: 2-4, 页码: 310-317 Huang Y; Wang H; Sun Q; Chen J; Wang JF; Wang YT; Yang H 收藏  |   Influences of reactor pressure of gan buffer layers on morphological evolution of gan grown by mocvd 期刊论文  iSwitch采集 Journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253 作者:  Chen, J;  Zhang, SM;  Zhang, BS;  Zhu, JJ;  Shen, XM 收藏  |   Effects of reactor pressure on gan nucleation layers and subsequent gan epilayers grown on sapphire substrate 期刊论文  iSwitch采集 Journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352 作者:  Chen, J;  Zhang, SM;  Zhang, BS;  Zhu, JJ;  Feng, G 收藏  |   Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文  OAI收割 science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626 作者:  Zhang SM 收藏  |   Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352 作者:  Zhang SM 收藏  |   Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253 作者:  Zhang SM 收藏  |