机构

• 半导体研究所 [50]

采集方式

• OAI收割 [31]
• iSwitch采集 [19]

内容类型

• 期刊论文 [47]
• 会议论文 [3]

发表日期

• 2010 [4]
• 2008 [3]
• 2006 [2]
• 2005 [3]
• 2003 [2]
• 2001 [3]
• 更多

学科主题

• 半导体材料 [18]
• 半导体物理 [9]
• 光电子学 [4]

筛选

浏览/检索结果: 共50条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512 Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.) 收藏  |   Different growth mechanisms of bimodal In As/GaAs QDs 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 308-311 作者:  Ye XL;  Zhou XL 收藏  |   The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy 期刊论文  OAI收割 optics communications, OPTICS COMMUNICATIONS, 2010, 2010, 卷号: 283, 283, 期号: 7, 页码: 1510-1513, 1510-1513 作者:  Huang X;  Zhang XH;  Zhu YG;  Li T;  Han LF   |  收藏  |   Temperature dependence of hole spin relaxation in ultrathin InAs monolayers 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 2010, 卷号: 42, 42, 期号: 5, 页码: 1597-1600, 1597-1600 作者:  Li T;  Zhang XH;  Zhu YG;  Huang X;  Han LF   |  收藏  |   Optimizing the gaas capping layer growth of 1.3 mu m inas/gaas quantum dots by a combined two-temperature and annealing process at low temperatures 期刊论文  iSwitch采集 Journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472 作者:  Yang, Tao;  Nishioka, Masao;  Arakawa, Yasuhiko 收藏  |   Photoluminescence and lasing properties of inas/gaas quantum dots grown by metal-organic chemical vapour deposition 期刊论文  iSwitch采集 Chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4300-4304 作者:  Liang Song;  Zhu Hong-Liang;  Pan Jiao-Qing;  Zhao Ling-Juan;  Wang Lu-Feng 收藏  |   Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures 期刊论文  OAI收割 journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472 作者:  Yang T 收藏  |   Selective growth of inas islands on patterned gaas (100) substrate 期刊论文  iSwitch采集 Superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453 作者:  Cui, CX;  Chen, YH;  Ren, YY;  Xu, B;  Jin, P 收藏  |   Selective growth of InAs islands on patterned GaAs (100) substrate 期刊论文  OAI收割 superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453 作者:  Xu B;  Jin P 收藏  |   1.3 mu m inas/gaas self-assembled quantum dots grown on in0.2ga0.8as-gaas combined strain-buffer layer 期刊论文  iSwitch采集 Journal of infrared and millimeter waves, 2005, 卷号: 24, 期号: 5, 页码: 324-327 作者:  Fang, ZD;  Gong, Z;  Miao, ZH;  Niu, ZC;  Shen, GD 收藏  |