中国科学院机构知识库网格系统: 检索

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	Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文 OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Gong, M (Gong, Meng); Fang, ZD (Fang, Zhidan); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) 收藏 \|
	A novel method for positioning of inas islands on gaas(110) 期刊论文 iSwitch采集 Physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 4, 页码: 537-544 作者: Cui, CX; Chen, YH; Zhang, CL; Jin, P; Shi, GX 收藏 \|
	A novel method for positioning of InAs islands on GaAs(110) 期刊论文 OAI收割 physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 4, 页码: 537-544 作者: Xu B; Jin P 收藏 \|
	Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces 期刊论文 OAI收割 journal of vacuum science & technology b, 2000, 卷号: 18, 期号: 1, 页码: 21-24 作者: Xu B 收藏 \|
	Substrate surface atomic structure influence on the growth of InAlAs quantum dots 期刊论文 OAI收割 journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 608-612 作者: Xu B 收藏 \|
	Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy 期刊论文 OAI收割 JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 192, 期号: 3-4, 页码: 376-380 作者: Gong, Q; Liang, JB; Xu, B; Ding, D; Li, HX \| 收藏 \|
	Analysis of atomic force microscopic results of inas islands formed by molecular beam epitaxy 期刊论文 iSwitch采集 Journal of crystal growth, 1998, 卷号: 192, 期号: 3-4, 页码: 376-380 作者: Gong, Q; Liang, JB; Xu, B; Ding, D; Li, HX 收藏 \|
	Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy 期刊论文 OAI收割 journal of crystal growth, 1998, 卷号: 192, 期号: 3-4, 页码: 376-380 作者: Xu B 收藏 \|
	Effective-mass theory for InAs/GaAs strained coupled quantum dots 期刊论文 OAI收割 physical review b, 1996, 卷号: 54, 期号: 16, 页码: 11575-11581 Li SS; Xia JB; Yuan ZL; Xu ZY; Ge WK; Wang XR; Wang Y; Wang J; Chang LL 收藏 \|