机构

• 半导体研究所 [6]
• 金属研究所 [2]
• 物理研究所 [1]
• 上海微系统与信息技术... [1]

采集方式

• OAI收割 [9]
• iSwitch采集 [1]

内容类型

• 期刊论文 [10]

发表日期

• 2011 [1]
• 2010 [1]
• 2008 [2]
• 2006 [1]
• 2003 [1]
• 2000 [3]
• 更多

学科主题

• 半导体材料 [3]
• 半导体物理 [2]
• Optics [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：69/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Defects in gallium nitride nanowires: First principles calculations 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 044305, Art. No. 044305 作者:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn   |  收藏  |  浏览/下载：114/1  |  提交时间：2010/10/11 CHEMICAL-VAPOR-DEPOSITION  Chemical-vapor-deposition  Gan Nanowires  Native Defects  Complexes  Epitaxy  Growth  Arrays  GAN NANOWIRES  NATIVE DEFECTS  COMPLEXES  EPITAXY  GROWTH  ARRAYS   First-principle study of native defects in cusco2 and cuyo2 期刊论文  iSwitch采集 Chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4279-4284 作者:  Fang Zhi-Jie;  Shi Li-Jie;  Liu Yong-Hui 收藏  |  浏览/下载：40/0  |  提交时间：2019/05/12 Cumo2  Native defects  Vienna ab-initio simulation package (vasp)   First-principle study of native defects in CuScO2 and CuYO2 期刊论文  OAI收割 chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4279-4284 Fang, ZJ; Shi, LJ; Liu, YH 收藏  |  浏览/下载：52/0  |  提交时间：2010/03/08 CuMO2  native defects  vienna ab-initio simulation package (VASP)   Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique 期刊论文  OAI收割 European Physical Journal-Applied Physics, 2006, 卷号: 35, 期号: 3, 页码: 195-200 S. W. Xue; X. T. Zu; X. Xiang; H. Deng; Z. Q. Xu 收藏  |  浏览/下载：20/0  |  提交时间：2012/04/14 chemical-vapor-deposition  pulsed-laser deposition  native  point-defects  zinc-oxide films  electrical-properties  optical-properties  spray-pyrolysis  transparent  orientation  origin   Development of thermodynamic modeling of oxygen-doped GaN semiconductor 期刊论文  OAI收割 CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 2003, 卷号: 27, 期号: 1, 页码: 1 Li, JB; Tedenac, JC; Li, CR; Zhang, WJ 收藏  |  浏览/下载：17/0  |  提交时间：2013/09/17 CHEMICAL-VAPOR-DEPOSITION  N-TYPE  INFRARED ELLIPSOMETRY  ELECTRONIC-STRUCTURE  NATIVE DEFECTS  EFFECTIVE-MASS  PHASE EPITAXY  POINT-DEFECTS  P-TYPE  CARRIER   D-A emission in photoluminescence spectrum of GaN grown by RF-plasma assisted MBE 期刊论文  OAI收割 FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 卷号: 4086, 页码: 282-285 Zhao, ZB; Li, W; Qi, M; Li, AZ 收藏  |  浏览/下载：22/0  |  提交时间：2012/03/24 YELLOW LUMINESCENCE  NATIVE DEFECTS  FILMS   Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232 Xu HZ; Wang ZG; Harrison I; Bell A; Ansell BJ; Winser AJ; Cheng TS; Foxon CT; Kawabe M 收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12 GaN  photoluminescence  optical quenching of photoconductivity  native defect level  molecular beam epitaxy  N-TYPE GAN  DEEP-LEVEL DEFECTS  YELLOW LUMINESCENCE  MAGNETIC-RESONANCE  THIN-FILMS   Point defects in III-V compound semiconductors 期刊论文  OAI收割 defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93 Chen N 收藏  |  浏览/下载：52/0  |  提交时间：2010/08/12 compound semiconductors  point defects  deep level centres  stoichiometry  MOLECULAR-BEAM EPITAXY  GAAS SINGLE-CRYSTALS  SEMIINSULATING GALLIUM-ARSENIDE  SEMI-INSULATING GAAS  ELECTRICAL-PROPERTIES  LATTICE-PARAMETER  NATIVE DEFECTS  CARBON  DIFFRACTOMETER  STOICHIOMETRY   LOCALIZED STATES INDUCED BY SELF-INTERSTITIAL DEFECTS IN ULTRA-THIN GAP INP STRAINED-LAYER SUPERLATTICES 期刊论文  OAI收割 Physica Status Solidi B-Basic Research, 1991, 卷号: 167, 期号: 1, 页码: 189-196 E. G. Wang; D. S. Wang 收藏  |  浏览/下载：12/0  |  提交时间：2012/04/14 alas/gaas superlattices  electronic-structure  optical-properties  native defects  semiconductors  stability