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CAS IR Grid
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半导体研究所 [6]
近代物理研究所 [3]
金属研究所 [2]
高能物理研究所 [2]
中国科学院大学 [2]
长春光学精密机械与物... [1]
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期刊论文 [17]
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半导体物理 [5]
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A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission
期刊论文
OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 793, 页码: 295-301
作者:
Qi, Lin
;
Chai, Zhaoyuan
;
Yang, Huazhe
;
Shahzad, M. Babar
;
Qi, Yang
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/02/02
Non-polar preferred orientation
Sb-doped ZnO film
Homojunction
P-type conduction
Acceptor-type defects
A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission
期刊论文
OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 793, 页码: 295-301
作者:
Qi, Lin
;
Chai, Zhaoyuan
;
Yang, Huazhe
;
Shahzad, M. Babar
;
Qi, Yang
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/02/02
Non-polar preferred orientation
Sb-doped ZnO film
Homojunction
P-type conduction
Acceptor-type defects
Effect of doping concentration on point defect structure in as-implanted zno
期刊论文
iSwitch采集
Solid state communications, 2017, 卷号: 261, 页码: 41-45
作者:
Wang, Huan-hua
;
Yuan, Mengyao
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/04/23
P-type zno
Ion implantation
Diffuse x-ray scattering
Point defects
Fabrication of p-Type ZnO: N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature
期刊论文
OAI收割
MATERIALS, 2017, 卷号: 10, 页码: 10
作者:
Jin, Yuping
;
Zhang, Nuannuan
;
Zhang, Bin
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2018/05/31
p-type ZnO: N films
oxygen vacancy (V-O)
zinc nitrite (Zn3N2)
oxygen plasma
Effect of doping concentration on point defect structure in As-implanted ZnO
期刊论文
OAI收割
SOLID STATE COMMUNICATIONS, 2017, 卷号: 261, 页码: 41-45
作者:
Yuan MY(苑梦尧)
;
Wang, HH
;
Yuan, MY
;
Wang HH(王焕华)
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/08/27
P-type ZnO
Ion implantation
Diffuse x-ray scattering
Point defects
Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films
期刊论文
OAI收割
MATERIALS LETTERS, 2015, 卷号: 161, 页码: 355-359
作者:
Nie, Xinran
;
Zhang, Bin
;
Wang, Jianzhong
;
Shi, Liqun
;
Di, Zengfeng
  |  
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2018/05/31
P-type ZnO:N film
Room-temperature ferromagnetism
V-O defects
BMPs
3D branched nanowire heterojunction photoelectrodes for high-efficiency solar water splitting and H-2 generation
期刊论文
OAI收割
nanoscale, 2012, 卷号: 4, 期号: 5, 页码: 1515-1521
Sun K
;
Jing Y
;
Li C
;
Zhang XF
;
Aguinaldo R
;
Kargar A
;
Madsen K
;
Banu K
;
Zhou YC
;
Bando Y
;
Liu ZW
;
Wang DL
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/08/25
P-TYPE SILICON
HYDROGEN GENERATION
OPTICAL-PROPERTIES
PHOTOVOLTAIC APPLICATIONS
INDIUM-PHOSPHIDE
PHOTO-CATHODES
NANOROD ARRAYS
CELLS
ZNO
PHOTOANODES
Contributions of N+, N-2(+), NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films
期刊论文
OAI收割
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2011, 卷号: 39, 页码: 711-716
作者:
Li, Zebin
;
Liang, Rongqing
;
Ou, Qiongrong
;
Zhang, Shuyu
;
He, Long
  |  
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2018/05/31
N-Al codoping
plasma immersion ion implantation (PIII)
p-type ZnO
Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE)
会议论文
OAI收割
作者:
Chen X.
;
Liu L.
;
Liu L.
;
Li B.
;
Li B.
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2013/03/25
Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux
and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux
and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.
The bipolar doping of ZnS via native defects and external dopants
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113704
作者:
Li JB
收藏
  |  
浏览/下载:141/30
  |  
提交时间:2010/03/08
AUGMENTED-WAVE METHOD
P-TYPE ZNO
POINT-DEFECTS
II-VI
NITROGEN
SEMICONDUCTORS
1ST-PRINCIPLES
COMPENSATION
ENHANCEMENT