机构

• 上海微系统与信息技术... [4]
• 物理研究所 [3]
• 长春光学精密机械与物... [3]
• 半导体研究所 [2]
• 金属研究所 [1]
• 上海光学精密机械研究... [1]
• 更多

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [11]
• 会议论文 [3]

发表日期

• 2015 [1]
• 2011 [3]
• 2010 [1]
• 2009 [3]
• 2008 [2]
• 2005 [3]
• 更多

学科主题

• 半导体材料 [2]
• Chemistry,... [1]
• Electroche... [1]
• Engineerin... [1]
• Engineerin... [1]
• 光学材料;晶体 [1]
• 更多

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Growth of alpha-axis ZnO films on the defective substrate with different O/Zn ratios: A reactive force field based molecular dynamics study 期刊论文  OAI收割 Journal of Alloys and Compounds, 2015, 卷号: 628, 页码: 317-324 L.; Shahzad Liu, M. B.; Qi, Y. 收藏  |  浏览/下载：33/0  |  提交时间：2015/05/08 Zinc oxide  Non-polar thin films  Atomic scale structure  Point defects  Molecular dynamics simulations  atomic layer deposition  beam epitaxy  thin-films  zinc-oxide  plane  sapphire  homoepitaxial growth  optical-properties  temperature  orientation  nanogenerators   Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文  OAI收割 作者:  Chen X.;  Liu L.;  Liu L.;  Li B.;  Li B. 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.   MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者:  Jia CH;  Song HP 收藏  |  浏览/下载：132/2  |  提交时间：2011/07/05 Anisotropy  Crystal morphology  Metalorganic chemical vapor deposition  a-Plane InN  INDIUM NITRIDE  MOVPE GROWTH  CUBIC INN  SAPPHIRE  GAN  MBE   The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42 作者:  Song HP;  Shi K;  Sang L;  Wei HY 收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05 Metal organic chemical vapor deposition  Sapphire  Zinc compounds  Semiconducting II-VI materials  VAPOR-PHASE EPITAXY  OPTICAL-PROPERTIES  ZNO NANORODS  RAMAN-SCATTERING  M-PLANE  FILMS  PHOTOLUMINESCENCE  DEPOSITION  NANOWIRES  FIELDS   Horizontally aligned single-walled carbon nanotubes can bridge wide trenches and climb high steps 期刊论文  OAI收割 CHEMICAL ENGINEERING JOURNAL, 2010, 卷号: 157, 期号: 2-3, 页码: 590-597 Rao, FB; Zhou, YX; Li, TE; Wang, YL 收藏  |  浏览/下载：66/0  |  提交时间：2011/12/17 CHEMICAL-VAPOR-DEPOSITION  R-PLANE SAPPHIRE  GROWTH-MECHANISM  LARGE-SCALE  LONG  TRANSISTORS  ARRAYS  CATALYSTS  SENSORS   Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation 期刊论文  OAI收割 NANOSCALE RESEARCH LETTERS, 2009, 卷号: 4, 期号: 7, 页码: 753 Wei, TB; Hu, Q; Duan, RF; Wang, JX; Zeng, YP; Li, JM; Yang, Y; Liu, YL 收藏  |  浏览/下载：24/0  |  提交时间：2013/09/18 PLASTIC PROPERTIES  PLANE SAPPHIRE  INDENTATION   Synthesis of radially aligned single-walled carbon nanotubes on a SiO2/Si substrate by introducing sodium chloride 期刊论文  OAI收割 CARBON, 2009, 卷号: 47, 期号: 10, 页码: 2548-2552 Rao, FB; Zhou, YX; Li, T; Wang, YL 收藏  |  浏览/下载：17/0  |  提交时间：2011/12/17 PLANE SAPPHIRE  GROWTH  SILICA   Synthesis of horizontally aligned single-walled carbon nanotubes without external force and their growth characteristics 期刊论文  OAI收割 2009 4TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1 AND 2, 2009, 页码: 559-562 Rao, FB; Li, T; Wang, YL 收藏  |  浏览/下载：27/0  |  提交时间：2011/12/17 R-PLANE SAPPHIRE  A-PLANE  SUBSTRATE  ARRAYS   Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy 期刊论文  OAI收割 ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 卷号: 11, 期号: 10, 页码: H273-H275 Wang, XZ; Yu, GH; Lin, CT; Cao, MX; Gong, H; Qi, M; Li, AZ 收藏  |  浏览/下载：23/0  |  提交时间：2012/03/24 HIGH-QUALITY GAN  PLANE SAPPHIRE  POROUS GAN  FILMS  NANOHETEROEPITAXY  FABRICATION  EPILAYERS  LAYERS  SI   导模法和温度梯度法生长r面蓝宝石(英文) 期刊论文  OAI收割 硅酸盐学报, 2008, 卷号: 36, 期号: 5, 页码: 678, 682 杨新波; 李红军; 徐军; 程艳; 周国清 收藏  |  浏览/下载：1395/140  |  提交时间：2009/09/24 Dislocation density  Edge defined film fed crystal growth (EFG)  R plane sapphire  Temperature gradient technique  Transmittance