机构

• 半导体研究所 [13]
• 物理研究所 [1]

采集方式

• OAI收割 [9]
• iSwitch采集 [5]

内容类型

• 期刊论文 [12]
• 会议论文 [2]

发表日期

• 2013 [1]
• 2006 [5]
• 2005 [1]
• 2002 [4]
• 2000 [2]
• 1997 [1]
• 更多

学科主题

• 半导体材料 [4]
• 半导体物理 [3]
• 光电子学 [1]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 In-plane optical anisotropy of inas/gasb superlattices with alternate interfaces 期刊论文  iSwitch采集 Nanoscale research letters, 2013, 卷号: 8, 期号: 1 作者:  Wu,Shujie;  Chen,Yonghai;  Yu,Jinling;  Gao,Hansong;  Jiang,Chongyun 收藏  |  浏览/下载：42/0  |  提交时间：2019/05/12 In-plane optical anisotropy  Inas/gasb superlattices  Reflectance difference spectroscopy   Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy 期刊论文  iSwitch采集 Spectroscopy and spectral analysis, 2006, 卷号: 26, 期号: 7, 页码: 1185-1189 作者:  Zhao Lei;  Chen Yong-hai;  Zuo Yu-hua;  Wang Hai-ning;  Shi Wen-hua 收藏  |  浏览/下载：33/0  |  提交时间：2019/05/12 Reflectance difference spectroscopy  Semiconductor  In-plane optical anisotropy  Electrooptic modification   Evolution of wetting layer in inas/gaas quantum dot system 期刊论文  iSwitch采集 Nanoscale research letters, 2006, 卷号: 1, 期号: 1, 页码: 79-83 作者:  Chen, Y. H.;  Ye, X. L.;  Wang, Z. G. 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Quantum dots  Wetting layer  Reflectance difference spectroscopy  Segregation   Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 99, 期号: 7, 页码: art.no.073507 作者:  Ye XL;  Xu B;  Jin P 收藏  |  浏览/下载：54/0  |  提交时间：2010/04/11 REFLECTANCE DIFFERENCE SPECTROSCOPY  LAYER   Evolution of wetting layer in InAs/GaAs quantum dot system 期刊论文  OAI收割 nanoscale research letters, 2006, 卷号: 1, 期号: 1, 页码: 79-83 Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：66/0  |  提交时间：2010/04/11 quantum dots  wetting layer  reflectance difference spectroscopy  segregation   Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy 期刊论文  OAI收割 spectroscopy and spectral analysis, 2006, 卷号: 26, 期号: 7, 页码: 1185-1189 Zhao L (Zhao Lei); Chen YH (Chen Yong-hai); Zuo YH (Zuo Yu-hua); Wang HN (Wang Hai-ning); Shi WH (Shi Wen-hua) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 reflectance difference spectroscopy  semiconductor  in-plane optical anisotropy  electrooptic modification  SURFACE  INTERFACE  GROWTH   Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy 期刊论文  iSwitch采集 Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5, 2005, 卷号: 475-479, 页码: 1777-1781 作者:  Chen, YH;  Ye, XL;  Xu, B;  Zeng, YP;  Wang, ZG 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Optical anisotropy  Quantum wells  Interface roughness  Reflectance difference spectroscopy  Segregation   Detection of indium segregation effects in ingaas/gaas quantum wells using reflectance-difference spectrometry 期刊论文  iSwitch采集 Materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 页码: 62-65 作者:  Ye, XL;  Chen, YH;  Xu, B;  Wang, ZG 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Reflectance-difference spectroscopy  Indium segregation  Ingaas/gaas quantum wells   Surface segregation of bulk oxygen on oxidation of epitaxially grown Nb-doped SrTiO3 on SrTiO3(001) 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2002, 卷号: 80, 期号: 16, 页码: 2889 Chen, F; Zhao, T; Fei, YY; Lu, HB; Chen, ZH; Yang, GZ; Zhu, XD 收藏  |  浏览/下载：20/0  |  提交时间：2013/09/24 ELECTRON-DIFFRACTION OSCILLATIONS  REFLECTANCE-DIFFERENCE TECHNIQUE  PHOTOEMISSION  SPECTROSCOPY  DEPOSITION  DIFFUSION  OXIDES  FILMS   Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 62-65 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：68/4  |  提交时间：2010/08/12 reflectance-difference spectroscopy  indium segregation  InGaAs/GaAs quantum wells  EPITAXY-GROWN INGAAS/GAAS  SURFACE SEGREGATION  INTERFACE