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• 半导体研究所 [16]
• 物理研究所 [6]
• 长春光学精密机械与物... [3]
• 上海微系统与信息技术... [3]
• 上海光学精密机械研究... [2]

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• OAI收割 [28]
• iSwitch采集 [2]

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• 期刊论文 [26]
• 会议论文 [4]

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• 2019 [2]
• 2014 [1]
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• 半导体材料 [12]
• 光学材料;晶体 [2]
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筛选

浏览/检索结果: 共30条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Light Extraction Analysis of A1GaInP Based Red and GaN Based Blue/Green Flip-Chip Micro-LEDs Using the Monte Carlo Ray Tracing Method 期刊论文  OAI收割 Micromachines, 2019, 卷号: 10, 期号: 12, 页码: 13 作者:  S.Y.Lan;  H.Wan;  J.Zhao;  S.J.Zhou   |  收藏  |  浏览/下载：27/0  |  提交时间：2020/08/24 micro-scale light emitting diode,light extraction efficiency,sapphire,substrate,encapsulation,emitting-diodes,high-power   High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate 期刊论文  OAI收割 Nanomaterials, 2019, 卷号: 9, 期号: 8, 页码: 10 作者:  Q.Zhao;  J.H.Miao;  S.J.Zhou;  C.Q.Gui;  B.Tang   |  收藏  |  浏览/下载：26/0  |  提交时间：2020/08/24 VLED,silicon substrate,current spreading,Au-In eutectic bonding,laser lift-off,lift-off,leds,enhancement,fabrication,performance,sapphire,Science & Technology - Other Topics,Materials Science   Fabrication of 2-inch nano patterned sapphire substrate with high uniformity by two-beam laser interference lithography 期刊论文  OAI收割 NANOPHOTONICS AND MICRO/NANO OPTICS II, 2014, 卷号: 9277 Dai, LG; Yang, F; Yue, G; Jiang, Y; Jia, HQ; Wang, WX; Chen, H 收藏  |  浏览/下载：41/0  |  提交时间：2015/04/14 Laser interference lithography  nano-scale patterned sapphire substrate  large area  high uniformity   Particle size and surfactant effects on chemical mechanical polishing of glass using silica-based slurry 期刊论文  OAI收割 APPLIED OPTICS, 2010, 卷号: 49, 期号: 28, 页码: 5480-5485 Zhang, ZF; Liu, WL; Song, ZT 收藏  |  浏览/下载：20/0  |  提交时间：2012/03/24 SUBSTRATE  CMP  DIOXIDE  PLANARIZATION  SAPPHIRE  CERIA  ACID   Synthesis of horizontally aligned single-walled carbon nanotubes without external force and their growth characteristics 期刊论文  OAI收割 2009 4TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1 AND 2, 2009, 页码: 559-562 Rao, FB; Li, T; Wang, YL 收藏  |  浏览/下载：23/0  |  提交时间：2011/12/17 R-PLANE SAPPHIRE  A-PLANE  SUBSTRATE  ARRAYS   Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 9 Mei, F; Fu, QM; Peng, T; Liu, C; Peng, MZ; Zhou, JM 收藏  |  浏览/下载：18/0  |  提交时间：2013/09/17 FE-DOPED GAN  GAN/SAPPHIRE INTERFACE  (-/0)-ACCEPTOR LEVEL  HEMT STRUCTURES  SAPPHIRE  LAYER  DISLOCATION  ENHANCEMENT  SUBSTRATE  TRANSPORT   High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：52/0  |  提交时间：2010/03/09 GaN  nitrides  LED  MOCVD  patterned sapphire substrate  wet etching   Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文  OAI收割 physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299 Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD 收藏  |  浏览/下载：75/3  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  TEMPERATURE ALN INTERLAYERS  PHASE EPITAXY  OPTICAL-PROPERTIES  SURFACTANT  SUBSTRATE  STRESS  SI  REDUCTION  SAPPHIRE   Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 8 Zeng, ZQ; Liu, YZ; Yuan, HT; Mei, ZX; Du, XL; Jia, JF; Xue, QK; Zhang, Z 收藏  |  浏览/下载：26/0  |  提交时间：2013/09/24 MOLECULAR-BEAM EPITAXY  SAPPHIRE SUBSTRATE  LAYER   Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure (EI CONFERENCE) 会议论文  OAI收割 作者:  Zhang J.;  Zhang J.;  Zhang J.;  Li B.;  Li B. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported  which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K. 2006 Elsevier B.V. All rights reserved.