机构

• 半导体研究所 [14]
• 金属研究所 [1]
• 高能物理研究所 [1]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [12]
• iSwitch采集 [5]

内容类型

• 期刊论文 [14]
• 会议论文 [3]

发表日期

• 2011 [2]
• 2007 [2]
• 2006 [2]
• 2005 [3]
• 2004 [2]
• 2001 [6]
• 更多

学科主题

• 半导体材料 [8]
• Crystallog... [1]
• 光电子学 [1]

筛选

浏览/检索结果: 共17条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011 作者:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang   |  收藏  |   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |   Effect of growth conditions on the gan thin film by sputtering deposition 期刊论文  iSwitch采集 Journal of crystal growth, 2007, 卷号: 299, 期号: 2, 页码: 268-271 作者:  Zhang, C. G.;  Bian, L. F.;  Chen, W. D.;  Hsu, C. C. 收藏  |   Three-dimensional dendrite-like nanostructures of gallium nitride 期刊论文  OAI收割 Journal of Crystal Growth, 2007, 卷号: 308, 期号: 1, 页码: 166-169 Q. F. Meng; C. B. Jiang; S. X. Mao 收藏  |   Electrical properties of undoped in0.53ga0.47as grown on inp substrates by molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 作者:  Cui, L. J.;  Zeng, Y. P.;  Wang, B. Q.;  Zhu, Z. P. 收藏  |   Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) 收藏  |   Realization of gaas/algaas quantum-cascade lasers with high average optical power 期刊论文  iSwitch采集 Solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964 作者:  Liu, JQ;  Liu, FQ;  Lu, XZ;  Guo, Y;  Wang, ZG 收藏  |   Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 285, 期号: 3, 页码: 333-338 作者:  Hu, CY;  Qin, ZX;  Chen, ZZ;  Yang, ZJ;  Yu, TJ 收藏  |   Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power 期刊论文  OAI收割 solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964 Liu JQ; Liu FQ; Lu XZ; Guo Y; Wang ZG 收藏  |   A study of the degree of relaxation of algan epilayers on gan template 期刊论文  iSwitch采集 Journal of crystal growth, 2004, 卷号: 270, 期号: 3-4, 页码: 289-294 作者:  Zhang, JC;  Wu, MF;  Wang, JF;  Liu, JP;  Wang, YT 收藏  |