机构

• 半导体研究所 [16]
• 金属研究所 [2]
• 国家空间科学中心 [1]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [14]
• iSwitch采集 [6]

内容类型

• 期刊论文 [19]
• 会议论文 [1]

发表日期

• 2016 [1]
• 2011 [5]
• 2009 [1]
• 2007 [1]
• 2006 [2]
• 2004 [1]
• 更多

学科主题

• 半导体材料 [5]
• 半导体物理 [3]
• 光电子学 [2]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode 期刊论文  OAI收割 Chinese Physics B, 2016, 卷号: 25, 期号: 11 作者:  Zhu, Ge;  Zheng, Fu;  Wang, Chao;  Sun, Zhibin;  Zhai, Guangjie 收藏  |  浏览/下载：33/0  |  提交时间：2016/12/29 Avalanche photodiodes  Bias voltage  Particle beams  Photodetectors  Photodiodes  Photons  Reconfigurable hardware  Semiconducting indium  Timing circuits  Timing jitter   Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As 期刊论文  OAI收割 ieee international conference on group iv photonics gfp, 2011, 页码: 314-316 Hu, Weixuan; Cheng, Buwen; Xue, Chunlai; Su, Shaojian; Liu, Zhi; Li, Yaming; Wang, Qiming 收藏  |  浏览/下载：57/0  |  提交时间：2012/06/13 Epitaxial growth  Germanium  Indium  Photonics  Semiconducting silicon compounds  Silicon   Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 105002 Qiu, Yingping; Wang, Yang; Shao, Yongbo; Zhou, Daibing; Liang, Song; Zhao, Lingjuan; Wang, Wei 收藏  |  浏览/下载：15/0  |  提交时间：2012/06/14 Absorption  Capacitance  Fabrication  Light extinction  Semiconducting indium gallium arsenide  Waveguides   2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan   |  收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14 Alignment  Atomic force microscopy  Atomic spectroscopy  Detectors  Epitaxial growth  Gallium alloys  Gallium arsenide  Indium arsenide  Infrared detectors  Molecular beam epitaxy  Molecular beams  Optoelectronic devices  Semiconducting gallium  Superlattices  Transmission electron microscopy  X ray diffraction  Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction   Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 optoelectronics letters, Optoelectronics Letters, 2011, 2011, 卷号: 7, 7, 期号: 5, 页码: 325-329, 325-329 作者:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng   |  收藏  |  浏览/下载：25/0  |  提交时间：2012/06/14 Epitaxial growth  Gallium arsenide  Growth(materials)  Molecular beam epitaxy  Semiconducting gallium  Semiconducting indium  Semiconductor quantum wells  Epitaxial Growth  Gallium Arsenide  Growth(Materials)  Molecular Beam Epitaxy  Semiconducting Gallium  Semiconducting Indium  Semiconductor Quantum Wells   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |  浏览/下载：33/0  |  提交时间：2012/06/14 Buffer layers  Epitaxial growth  Gallium alloys  Indium antimonides  Molecular beam epitaxy  Molecular beams  Optical waveguides  Optimization  Semiconducting gallium arsenide  Semiconductor quantum wells  Tellurium  Tellurium compounds  Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds   Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition 期刊论文  OAI收割 chinese physics b, 2009, 卷号: 18, 期号: 1, 页码: 320-323 作者:  Yan Jun-Feng;  Wang Tao;  Wang Jing-Wei;  Zhang Zhi-Yong;  Zhao Wu 收藏  |  浏览/下载：213/7  |  提交时间：2010/01/12 metalorganic chemical vapour deposition (MOCVD)  antimonides  semiconducting indium compounds   Butt-coupled movpe growth for high-performance electro-absorption modulator integrated with a dfb laser 期刊论文  iSwitch采集 Journal of crystal growth, 2007, 卷号: 308, 期号: 2, 页码: 297-301 作者:  Cheng, YuanBing;  Pan, JiaoQing;  Liang, Song;  Feng, Wen;  Liao, Zaiyi 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Coupling efficiency  Butt-joint scheme  Metal-organic vapor phase epitaxy  Selective area growth (sag)  Semiconducting indium phosphide  Laser diodes   Electrical properties of undoped in0.53ga0.47as grown on inp substrates by molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 作者:  Cui, L. J.;  Zeng, Y. P.;  Wang, B. Q.;  Zhu, Z. P. 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12 Characterization  Point defects  Molecular beam epitaxy  Semiconducting gallium compounds  Semiconducting indium compounds  Semiconducting ternary compounds   Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) 收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11 characterization  point defects  molecular beam epitaxy  semiconducting gallium compounds  semiconducting indium compounds  semiconducting ternary compounds  1.55 MU-M  QUANTUM-WELLS  TEMPERATURE  GAAS