机构

• 新疆理化技术研究所 [9]
• 新疆生态与地理研究所 [1]
• 上海微系统与信息技术... [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [11]
• 学位论文 [1]

发表日期

• 2022 [1]
• 2020 [1]
• 2016 [1]
• 2015 [1]
• 2014 [2]
• 2012 [1]
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学科主题

• Physics [3]
• Engineerin... [1]
• Engineerin... [1]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214 作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2]   |  收藏  |  浏览/下载：37/0  |  提交时间：2022/04/07 Total ionizing dose irradiation  UTBB FD-SOI  1  f noise   Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566 作者:  Liang, XW (Liang, Xiaowen)[ 1,2,3 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Yu, XF (Yu, Xuefeng)[ 1,2 ]   |  收藏  |  浏览/下载：29/0  |  提交时间：2020/12/11 SiC MOSFET  total ionizing dose irradiation  time-dependent dielectric breakdown   Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 卷号: 63, 期号: 2, 页码: 1251-1258 作者:  Zhang, JX (Zhang, Jinxin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hongxia);  Lu, W (Lu, Wu);  He, CH (He, Chaohui) 收藏  |  浏览/下载：44/0  |  提交时间：2016/12/12 Bias conditions  Co-60 gamma irradiation  SiGe HBT  total ionizing dose effect   Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 10 作者:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Yu, XF (Yu Xue-Feng)   |  收藏  |  浏览/下载：19/0  |  提交时间：2017/09/21 Total Dose Irradiation  Static Random Access Memory  Functional Failure Mode   Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation 期刊论文  OAI收割 Chinese Physics B, 2014, 卷号: 23, 期号: 10 作者:  Zheng, Qi-Wen;  Yu, Xue-Feng;  Cui, Jiang-Wei;  Guo, Qi;  Ren, Di-Yuan 收藏  |  浏览/下载：33/0  |  提交时间：2014/11/11 total dose irradiation  static random access memory  pattern imprinting  deep sub-micron   Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 卷号: 61, 期号: 4, 页码: 1777-1784 作者:  Ding, LL;  Guo, HX;  Chen, W;  Yao, ZB;  Yan, YH 收藏  |  浏览/下载：17/0  |  提交时间：2016/04/08 Failure modes  focused synchrotron x-ray irradiation  SRAM-based FPGA  total ionizing dose effect   The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 2, 页码: - 作者:  Cui Jiang-Wei;  Yu Xue-Feng;  Ren Di-Yuan;  Lu Jian 收藏  |  浏览/下载：25/0  |  提交时间：2012/11/29 sub-micro  total dose irradiation  hot-carrier effect   Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 6 作者:  Gao Bo;  Yu Xue-Feng;  Ren Di-Yuan;  Cui Jiang-Wei;  Lan Bo 收藏  |  浏览/下载：49/0  |  提交时间：2012/11/29 p-type metal-oxide-semiconductor field-effect transistor  Co-60 gamma-ray  total-dose irradiation damage effects  enhanced low dose rate sensitivity   p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究 期刊论文  OAI收割 物理学报, 2011, 卷号: 60, 期号: 6, 页码: 812-818 作者:  高博;  余学峰;  任迪远;  崔江维;  兰博 收藏  |  浏览/下载：28/0  |  提交时间：2012/11/29 p-type metal-oxide-semiconductor field-effect transistor  60Co gamma-ray  total-dose irradiation damage effects  enhanced low dose rate sensitivity   Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 3 作者:  Gao Bo;  Yu Xue-Feng;  Ren Di-Yuan;  Li Yu-Dong;  Cui Jiang-Wei 收藏  |  浏览/下载：23/0  |  提交时间：2012/11/29 (60)Co gamma  total-dose irradiation damage effects  SRAM-based FPGA  CMOS cell