机构

• 合肥物质科学研究院 [10]
• 上海微系统与信息技术... [1]
• 半导体研究所 [1]

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• OAI收割 [12]

内容类型

• 期刊论文 [12]

发表日期

• 2019 [1]
• 2018 [1]
• 2017 [4]
• 2016 [4]
• 2012 [1]
• 2008 [1]
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学科主题

• Science & ... [1]
• 半导体材料 [1]

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浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587 作者:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao   |  收藏  |  浏览/下载：69/0  |  提交时间：2020/03/31 Dy2O3 gate dielectrics  High-k  Annealing temperature  Optical properties  Electrical characteristics   Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9 作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang   |  收藏  |  浏览/下载：70/0  |  提交时间：2019/06/10 electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors   Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328 作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D. 收藏  |  浏览/下载：28/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices   Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420 作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M. 收藏  |  浏览/下载：15/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel   Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206 作者:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M. 收藏  |  浏览/下载：18/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Interface Quality  Band Alignment  Electrical Properties  Leakage Current Mechanism   Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics 期刊论文  OAI收割 CERAMICS INTERNATIONAL, 2017, 卷号: 43, 期号: 3, 页码: 3101-3106 作者:  Jin, P.;  He, G.;  Fang, Z. B.;  Liu, M.;  Xiao, D. Q. 收藏  |  浏览/下载：24/0  |  提交时间：2018/07/04 High-k Hfalox Gate Dielectrics  Sol-gel  Optical Properties  Electrical Properties  Leakage Current Transport Mechanism   Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 925-932 作者:  Jin, P.;  He, G.;  Wang, P. H.;  Liu, M.;  Xiao, D. Q. 收藏  |  浏览/下载：65/0  |  提交时间：2017/09/11 High-k Gate Dielectrics  Hftiox Thin Films  Sol-gel Processing  Optical Properties  Electrical Properties   Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 252-259 作者:  Xiao, D. Q.;  He, G.;  Liu, M.;  Gao, J.;  Jin, P. 收藏  |  浏览/下载：47/0  |  提交时间：2017/10/18 High-k Gate Dielectrics  Optical Constant  Electrical Properties  Ti incorporaTion  Sol-gel  Conduction Mechanisms   Microstructure, optical and electrical properties of sputtered HfFiO high-k gate dielectric thin films 期刊论文  OAI收割 CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 10, 页码: 11640-11649 作者:  Jiang, S. S.;  He, G.;  Gao, J.;  Xiao, D. Q.;  Jin, P. 收藏  |  浏览/下载：31/0  |  提交时间：2017/10/18 Electrical Properties  High-k Gate Dielectrics  Metal-oxide-semiconductor  Conduction Mechanisms  Sputtering   Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics 期刊论文  OAI收割 CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769 作者:  Jin, Peng;  He, Gang;  Xiao, Dongqi;  Gao, Juan;  Liu, Mao 收藏  |  浏览/下载：23/0  |  提交时间：2017/10/18 High-k Gate Dielectrics  Sol-gel  Electrical Properties  Leakage Current Transport Mechanism  Optical Properties