机构

• 物理研究所 [5]
• 半导体研究所 [5]
• 高能物理研究所 [1]
• 长春应用化学研究所 [1]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [12]

发表日期

• 2003 [5]
• 2002 [2]
• 2001 [1]
• 2000 [1]
• 1999 [2]
• 1997 [1]
• 更多

学科主题

• 半导体材料 [5]
• Crystallog... [1]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 The growth morphologies of GaN layer on Si(111) substrate 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 247, 期号: 1-2, 页码: 91 Lu, YA; Liu, XL; Lu, DC; Yuan, HR; Hu, GQ; Wang, XH; Wang, ZG; Duan, XF 收藏  |   Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文  OAI收割 science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626 作者:  Zhang SM 收藏  |   The growth morphologies of GaN layer on Si(111) substrate 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98 Lu YA; Liu XL; Lu DC; Yuan HR; Hu GQ; Wang XH; Wang ZG; Duan XF 收藏  |   Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253 作者:  Zhang SM 收藏  |   X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 254, 期号: 1-2, 页码: 23-27 Shen XM; Wang YT; Zheng XH; Zhang BS; Chen J; Feng G; Yang H 收藏  |   Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 242, 期号: 1-2, 页码: #REF! 作者:  Zheng, XH;  Feng, ZH;  Wang, YT;  Zheng, WL;  Jia, QJ 收藏  |   Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 242, 期号: 1-2, 页码: 124-128 Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW 收藏  |   Evolution of island-pit surface morphologies of InAs epilayers grown on GaAs (001) substrates 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 89, 期号: 7, 页码: 3700 Li, JH; Moss, SC; Han, BS; Mai, ZH 收藏  |   Stress reduction by ion bombardment in CeO2 films 期刊论文  OAI收割 SOLID STATE COMMUNICATIONS, 2000, 卷号: 114, 期号: 11, 页码: 613 Wang, RP; Pan, SH; Zhou, YL 收藏  |   Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate 期刊论文  OAI收割 MODERN PHYSICS LETTERS B, 1999, 卷号: 13, 期号: 3-4, 页码: 125 Meng, QB; Fei, YJ; Kang, J; Xiong, YY; Lin, ZD; Feng, KA 收藏  |