机构

• 上海微系统与信息技术... [6]
• 上海光学精密机械研究... [3]
• 工程热物理研究所 [2]
• 长春光学精密机械与物... [1]
• 大连化学物理研究所 [1]

采集方式

• OAI收割 [13]

内容类型

• 期刊论文 [12]
• 会议论文 [1]

发表日期

• 2015 [1]
• 2012 [1]
• 2011 [1]
• 2008 [3]
• 2007 [2]
• 2005 [2]
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学科主题

• 光存储 [2]
• Chemistry,... [1]
• Engineerin... [1]
• Materials ... [1]
• Materials ... [1]
• Physics, A... [1]
• 更多

筛选

浏览/检索结果: 共13条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A novel thermal-insulating film incorporating microencapsulated phase-change materials for temperature regulation and nano-TiO2 for UV-blocking 期刊论文  OAI收割 solar energy materials and solar cells, 2015, 卷号: 137, 页码: 210-218 作者:  Zhang, Huanzhi;  Zou, Yongjin;  Sun, Yujia;  Sun, Lixian;  Xu, Fen 收藏  |  浏览/下载：57/0  |  提交时间：2015/11/17 Thermal insulating film  Phase change material  Temperature regulation  UV-blocking property   Advantages of GeTeN material for phase change memory applications 期刊论文  OAI收割 JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 卷号: 358, 期号: 17, 页码: 2416-2419 Peng, C; Wu, LC; Song, ZT; Zhou, XL; Zhu, M; Rao, F; Liu, B; Feng, SL 收藏  |  浏览/下载：15/0  |  提交时间：2013/04/17 GeTeN  Thin film  Phase-change memory  Band gap  Interfacial performance   Changes of optical, dielectric, and structural properties of Si15Sb85 phase change memory thin films under different initializing laser power 期刊论文  OAI收割 journal of alloys and compounds, 2011, 期号: 509, 页码: 5050-5054 Huang Huan(黄欢); Zhang Lei(张雷); Wang Yang(王阳); Han Xiao Dong(韩晓东); Wu Yiqun(吴谊群); Zhang Ze(张泽); Gan Fuxi(干福熹) 收藏  |  浏览/下载：88/26  |  提交时间：2011/03/30 SiSb phase change film   Germanium nitride interfacial layer for chalcogenide random access memory applications 期刊论文  OAI收割 APPLIED PHYSICS EXPRESS, 2008, 卷号: 1, 期号: 1, 页码: 11201-11201 Shen, J; Liu, B; Song, Z; Xu, C; Rao, F; Liang, S; Feng, S; Chen, B 收藏  |  浏览/下载：22/0  |  提交时间：2012/03/24 CHANGE OPTICAL DISK  PHASE-CHANGE MEMORY  GE2SB2TE5 FILM  HIGH-DENSITY  DEVICE   The microstructure investigation of GeTi thin film used for non-volatile memory 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2008, 卷号: 254, 期号: 15, 页码: 4638-4643 Shen, J; Liu, B; Song, ZT; Xu, C; Liang, S; Feng, SL; Chen, BM 收藏  |  浏览/下载：20/0  |  提交时间：2012/03/24 RANDOM-ACCESS MEMORY  PHASE-CHANGE  NEGATIVE RESISTANCE  SWITCHING PHENOMENA  GE2SB2TE5 FILM  OXIDE-FILMS  GLASSES  TRANSITION   激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化 期刊论文  OAI收割 无机材料学报, 2008, 卷号: 23, 期号: 6, 页码: 1111, 1114 孙华军; 侯立松; 吴谊群; 魏劲松 收藏  |  浏览/下载：1792/426  |  提交时间：2009/09/22 Ge2Sb2Te5薄膜  Ge2Sb2Te5 film  激光辐照  laser-irradiation  电/光性质  electrical/optical properties  光学常数  optical constants  相转变  phase change   Effect of structural transformation on the electrical properties for Ge1Sb2Te4 thin film 期刊论文  OAI收割 THIN SOLID FILMS, 2007, 卷号: 516, 期号: 1, 页码: 42-46 Zhang, T; Song, ZT; Liu, B; Feng, GM; Feng, SL; Chen, BM 收藏  |  浏览/下载：19/0  |  提交时间：2012/03/24 PHASE-CHANGE FILM  MEMORY  RESISTANCE  GESBTE   Chalcogenide random access memory cell with structure of W sub-microtube heater electrode 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 1, 页码: 262-264 Bo, L; Feng, GM; Wu, LC; Song, ZT; Liu, QB; Feng, SL; Bomy, C 收藏  |  浏览/下载：22/0  |  提交时间：2012/03/24 PHASE-CHANGE MEMORY  ION-BEAM METHOD  SB2TE3 MATERIAL  GE2SB2TE5 FILM  ELEMENT  CRYSTALLIZATION   The effect of transparent film on its surface 3-D mapping by using vertical scanning white light interferometer (EI CONFERENCE) 会议论文  OAI收割 ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005, Changchun, China Wu X.; Lei F.; Yatagai T. 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25 We have investigated the effect of transparent thin film while mapping its surface profile by using vertical scanning white light interferometer. Our theory analysis showed that multiple reflections taking place within the transparent thin film result in an extra phase change. The simulation and experiment results revealed that this extra phase change is also related to the thickness of thin film  the numerical number of microscope interferometer objective and the spectral distribution of light source. As a result of extra phase change  the interferogram has some deviation in its shape or two interference fringes may appears while the thickness of thin film is large.   Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material 期刊论文  OAI收割 MICROELECTRONIC ENGINEERING, 2005, 卷号: 82, 期号: 2, 页码: 168-174 Liu, B; Song, ZT; Feng, SL; Chen, BM 收藏  |  浏览/下载：24/0  |  提交时间：2012/03/24 RANDOM-ACCESS MEMORY  PHASE-CHANGE MEMORY  MEDIA  FUTURE  DEVICE  FILM