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浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Enhancing removal of hydrogen from granular polysilicon by innovating vacuum separation model and method for SoG-Si 期刊论文  OAI收割 SOLAR ENERGY, 2022, 卷号: 241, 页码: 492-503 作者:  Wu, Zhiliang;  Qian, Guoyu;  Wang, Zhi;  Wang, Dong;  Ma, Wenhui   |  收藏  |  浏览/下载：32/0  |  提交时间：2023/02/24 Solar grade polysilicon  Granular Polysilicon  Dehydrogenation  Vacuum refining  Separation model   Dopant diffusion through ultrathin AlOx and AlOx/SiOx tunnel layer in TOPCon structure and its impact on the passivation quality on c-Si solar cells 期刊论文  OAI收割 SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2021, 卷号: 223 作者:  Lu, Linna;  Zeng, Yuheng;  Liao, Mingdun;  Zheng, Jingming;  Lin, Yiran   |  收藏  |  浏览/下载：35/0  |  提交时间：2021/12/01 SILICON-OXIDE  SELECTIVE CONTACTS  ALUMINUM-OXIDE  REAR CONTACTS  N-TYPE  BORON  POLYSILICON  TEMPERATURE  TRANSPORT   Comparison of different types of interfacial oxides on hole-selective p(+)-poly-Si passivated contacts for high-efficiency c-Si solar cells 期刊论文  OAI收割 SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 210 作者:  Guo, Xueqi;  Liao, Mingdun;  Rui, Zhe;  Yang, Qing;  Wang, Zhixue   |  收藏  |  浏览/下载：79/0  |  提交时间：2020/12/16 SILICON-OXIDE  P-TYPE  REAR CONTACTS  POLYSILICON  LAYER  RESISTANCE  TRANSPORT  JUNCTIONS  THICKNESS  QUALITY   Fabrication and characterisation of polysilicon-based clamped-clamped filter 期刊论文  OAI收割 key engineering materials, 2011, 卷号: 483, 页码: 112-116 Zhao, Yongmei; Ning, Jin; Han, Guowei; Si, Chaowei 收藏  |  浏览/下载：29/0  |  提交时间：2012/06/14 Electromechanical filters  Fabrication  Microelectromechanical devices  Nanotechnology  Polysilicon  Resonators  Technology   An Effective Approach for Restraining Galvanic Corrosion of Polycrystalline Silicon by Hydrofluoric-Acid-Based Solutions 期刊论文  OAI收割 journal of microelectromechanical systems, 2011, 卷号: 20, 期号: 2, 页码: 470-475 Liu YF; Xie J; Zhang ML; Yang JL; Yang FH 收藏  |  浏览/下载：63/1  |  提交时间：2011/07/06 Galvanic corrosion  polysilicon  resistivity  titanium (Ti) redox sacrificial layer  POLYSILICON  OXIDATION   The digital geometric phase technique applied to the deformation evaluation of MEMS devices 期刊论文  OAI收割 JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2009, 卷号: 19, 期号: 1 Liu, ZW; Xie, HM; Gu, CZ; Meng, YG 收藏  |  浏览/下载：66/0  |  提交时间：2013/09/23 MOIRE METHOD  THIN-FILMS  STRAIN  DISPLACEMENT  MICROSTRUCTURES  POLYSILICON  MICRO  FIELD   A non-isothermal model for squeeze film damping of rarefied gas 期刊论文  OAI收割 2009 IEEE SENSORS, VOLS 1-3, 2009, 页码: 213-216 Yang, H; Cheng, HT; Dai, B; Li, XX; Wang, YL 收藏  |  浏览/下载：25/0  |  提交时间：2011/12/17 POLYSILICON  REGIME  MEMS   Squeeze film air damping in MEMS 期刊论文  OAI收割 SENSORS AND ACTUATORS A-PHYSICAL, 2007, 卷号: 136, 期号: 1, 页码: 3-27 Bao, MH; Yang, H 收藏  |  浏览/下载：26/0  |  提交时间：2012/03/24 TORSION MIRROR  VACUUM  MODEL  ACCELEROMETER  POLYSILICON  SIMULATION   Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.   Resonance enhancement of micromachined resonators with strong mechanical-coupling between two degrees of freedom 期刊论文  OAI收割 MICROELECTRONIC ENGINEERING, 2003, 卷号: 65, 期号: 1-2, 页码: 1-12 Li, XX; Ono, T; Lin, RM; Esashi, M 收藏  |  浏览/下载：15/0  |  提交时间：2011/12/17 POLYSILICON