中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共14条，第1-10条

帮助

条数/页：排序方式：
	Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature 期刊论文 OAI收割 MATERIALS, 2020, 卷号: 13, 期号: 24 作者: Wang, Tao \| 收藏 \| 浏览/下载：9/0 \| 提交时间：2021/12/01 SILICON-CARBIDE ON-INSULATOR HYDROGEN IMPLANTATION SURFACE EXFOLIATION BUBBLE FORMATION ION-CUT IRRADIATION HELIUM WAFERS H+
	Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes 期刊论文 OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 11, 页码: 2784-2792 作者: Liu, Ningyang; Wang, Lei; Song LG(宋力刚); Cao XZ(曹兴忠); Wang BY(王宝义) \| 收藏 \| 浏览/下载：56/0 \| 提交时间：2019/10/11 Atom displacement carrier removal effect carrier ultrafast dynamics GaN indium localization light-emitting diodes (LEDs) nonradiative recombination centers (NRCs) positron annihilation spectroscopy (PAS) silicon ion irradiation strain relaxation
	A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM 会议论文 OAI收割作者: Yan, Weiwei; Wang, Bin; Zeng, Chuanbin; Geng, Chao; Liu, Tianqi \| 收藏 \| 浏览/下载：54/0 \| 提交时间：2018/08/20 Heavy ion irradiation Single event upset Active delay element SRAM cell Radiation hardened Silicon-on-insulator
	A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM 期刊论文 OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 卷号: 406, 页码: 437-442 作者: Wang, Bin; Zeng, Chuanbin; Geng, Chao; Liu, Tianqi; Khan, Maaz \| 收藏 \| 浏览/下载：47/0 \| 提交时间：2018/05/31 Heavy ion irradiation Single event upset Active delay element SRAM cell Radiation hardened Silicon-on-insulator
	Comparison of single-event transients of t-gate core and io device in 130nm partially depleted silicon-on-insulator technology 期刊论文 iSwitch采集 Ieice electronics express, 2016, 卷号: 13, 期号: 12, 页码: 11 作者: Zheng Yunlong; Dai Ruofan; Chen Zhuojun; Sun Shulong; Wang Zheng 收藏 \| 浏览/下载：47/0 \| 提交时间：2019/05/09 Direct measurement Heavy ion irradiation Silicon on insulator technology Single event transient Mosfet Radiation harden by design
	Micro-Raman spectroscopy characterization of silicon with different structures irradiated with energetic Bi-ions 期刊论文 OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2015, 卷号: 365, 页码: 123-127 作者: Wang, Dong; Gao, Xing; Shen, Tielong; Wei, Kongfang; Sheng, Yanbin \| 收藏 \| 浏览/下载：46/0 \| 提交时间：2018/05/31 Heavy-ion irradiation Silicon Raman spectra Microstructure
	Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation 期刊论文 OAI收割 INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2015, 卷号: 36, 期号: 5-6, 页码: 1173-1180 作者: Wang, Qian 收藏 \| 浏览/下载：22/0 \| 提交时间：2015/09/21 Ion implantation Laser irradiation Photocarrier radiometry Silicon Ultra-shallow junction
	Evolution of amorphization and nanohardness in SiC under Xe ion irradiation 期刊论文 OAI收割 JOURNAL OF NUCLEAR MATERIALS, 2014, 卷号: 454, 期号: 42007, 页码: 173—177 Li, JJ; Huang, HF; Lei, GH; Huang, Q; Liu, RD; Li, DH; Yan, L 收藏 \| 浏览/下载：167/0 \| 提交时间：2015/03/13 SILICON-CARBIDE MECHANICAL-PROPERTIES NEUTRON-IRRADIATION RAMAN-SPECTROSCOPY HEAVY-ION DAMAGE BEAM INDENTATION IMPLANTATION TEMPERATURE
	Surface damage of Ti3SiC2 by MeV iodine bombardment 期刊论文 OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 卷号: 307, 页码: 536-540 作者: Liu, CZ; Shi, LQ; Qi, Q; O'Connor, DJ; King, BV 收藏 \| 浏览/下载：20/0 \| 提交时间：2016/04/08 Titanium silicon carbide MAX phase Ion irradiation Surface damage