机构

• 半导体研究所 [7]
• 物理研究所 [3]
• 金属研究所 [3]

采集方式

• OAI收割 [9]
• iSwitch采集 [4]

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筛选

浏览/检索结果: 共13条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Strain engineering of ferroelectric topologies prepared on conventional SrTiO3 substrates buffered with REScO3 layers 期刊论文  OAI收割 ACTA MATERIALIA, 2023, 卷号: 243, 页码: 7 作者:  Chen, S. J.;  Tang, Y. L.;  Gong, F. H.;  Wang, J. H.;  Lv, X. D.   |  收藏  |  浏览/下载：20/0  |  提交时间：2023/05/09 Rare earth scandate  Buffer layer  Ferroelectric topologies  Strain engineering  Transmission electron microscopy   Promoting strain relaxation of si0.72ge0.28 film on si (100) substrate by inserting a low-temperature ge islands layer in uhvcvd 期刊论文  iSwitch采集 Applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 2660-2664 作者:  Zhou, Zhiwen;  Cai, Zhimeng;  Li, Cheng;  Lai, Hongkai;  Chen, Songyan 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Relaxed buffer  Sige film  Lt-ge layer  Strain relaxation  Uhvcvd   Strain status in zno film on sapphire substrate with a gan buffer layer grown by metal-source vapor phase epitaxy 期刊论文  iSwitch采集 Microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1542-1544 作者:  Cui, J. P.;  Duan, Y.;  Wang, X. F.;  Zeng, Y. P. 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 Zno film  Strain status  Gan buffer layer  Sapphire  Mvpe   Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy 期刊论文  OAI收割 MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 12, 页码: 1542-1544 作者:  Cui, J. P.;  Duan, Y.;  Wang, X. F.;  Zeng, Y. P.   |  收藏  |  浏览/下载：14/0  |  提交时间：2021/02/02 ZnO film  Strain status  GaN buffer layer  Sapphire  MVPE   Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy 期刊论文  OAI收割 MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 12, 页码: 1542-1544 作者:     |  收藏  |  浏览/下载：10/0  |  提交时间：2021/02/02 ZnO film  Strain status  GaN buffer layer  Sapphire  MVPE   Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy 期刊论文  OAI收割 microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1542-1544 Cui JP; Duan Y; Wang XF; Zeng YP 收藏  |  浏览/下载：232/122  |  提交时间：2010/03/08 ZnO film  Strain status  GaN buffer layer  Sapphire  MVPE   1.3 mu m inas/gaas self-assembled quantum dots grown on in0.2ga0.8as-gaas combined strain-buffer layer 期刊论文  iSwitch采集 Journal of infrared and millimeter waves, 2005, 卷号: 24, 期号: 5, 页码: 324-327 作者:  Fang, ZD;  Gong, Z;  Miao, ZH;  Niu, ZC;  Shen, GD 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Inas/gaas quantum dots  Combined strain-buffer layer  Photoluminescence  Atomic force microscopy   The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer 期刊论文  OAI收割 pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1791-1794 Shi, GX; Xu, B; Jin, P; Ye, XL; Cui, CX; Zhang, CL; Wu, J; Wang, ZG 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/17 quantum dots  strain buffer layer  InAs  photoluminescence  WELL  LASER  LAYER   The structural and photoluminescence character of inas quantum dots grown on a combined inalas and gaas strained buffer 期刊论文  iSwitch采集 Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5, 2005, 卷号: 475-479, 页码: 1791-1794 作者:  Shi, GX;  Xu, B;  Jin, P;  Ye, XL;  Cui, CX 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Quantum dots  Strain buffer layer  Inas  Photoluminescence   Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREM 期刊论文  OAI收割 ULTRAMICROSCOPY, 2004, 卷号: 98, 期号: 2-4, 页码: 259 Wang, D; Zou, J; He, WZ; Chen, H; Li, FH; Kawasaki, K; Oikawa, T 收藏  |  浏览/下载：22/0  |  提交时间：2013/09/17 RESOLUTION ELECTRON-MICROSCOPY  SINGLE HETEROSTRUCTURES  FOCUS-VARIATION  BUFFER LAYER  RECONSTRUCTION  DENSITY  STRAIN  SI