中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [25]
采集方式
OAI收割 [25]
内容类型
期刊论文 [21]
会议论文 [4]
发表日期
2011 [4]
2010 [1]
2009 [2]
2008 [2]
2007 [2]
2006 [4]
更多
学科主题
半导体材料 [17]
光电子学 [5]
半导体物理 [3]
筛选
浏览/检索结果:
共25条,第1-10条
帮助
限定条件
存缴方式:oaiharvest
专题:半导体研究所
第一署名单位
第一作者单位
通讯作者单位
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
发表日期升序
发表日期降序
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
OAI收割
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
期刊论文
OAI收割
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M
;
Wang, XL
;
Pan, X
;
Xiao, HL
;
Wang, CM
;
Hou, QF
;
Wang, ZG
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/01/06
GaN
MOCVD
Si(111)
AlN
VAPOR-PHASE EPITAXY
LAYERS
SUBSTRATE
MOCVD
STRESS
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
收藏
  |  
浏览/下载:81/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
Application of Raman spectroscopy in carbon nanotube-based polymer composites
期刊论文
OAI收割
chinese science bulletin, CHINESE SCIENCE BULLETIN, 2010, 2010, 卷号: 55, 55, 期号: 35, 页码: 3978-3988, 3978-3988
作者:
Gao Y
;
Li LY
;
Tan PH
;
Liu LQ
;
Zhang Z
  |  
收藏
  |  
浏览/下载:101/2
  |  
提交时间:2011/07/05
Raman spectroscopy
carbon nanotube
composites
CNT macroarchitecture
RADIAL BREATHING MODE
DIAMETER DISTRIBUTION
WALL
SCATTERING
FIBERS
SENSORS
STRESS
FUNCTIONALIZATION
NANOCOMPOSITES
OXIDATION
Raman Spectroscopy
Carbon Nanotube
Composites
Cnt Macroarchitecture
Radial Breathing Mode
Diameter Distribution
Wall
Scattering
Fibers
Sensors
Stress
Functionalization
Nanocomposites
Oxidation
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902
Chen YH
;
Li C
;
Zhou ZW
;
Lai HK
;
Chen SY
;
Ding WC
;
Cheng BW
;
Yu YD
收藏
  |  
浏览/下载:93/14
  |  
提交时间:2010/03/08
chemical vapour deposition
elemental semiconductors
energy gap
germanium
Ge-Si alloys
photoluminescence
semiconductor epitaxial layers
semiconductor quantum wells
silicon
tensile strength
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108
作者:
Xu B
;
Ye XL
收藏
  |  
浏览/下载:69/0
  |  
提交时间:2010/03/08
aluminium compounds
gallium arsenide
III-V semiconductors
internal stresses
reflectivity
semiconductor heterojunctions
semiconductor quantum wells
High-temperature AlN interlayer for crack-free AlGaN growth on GaN
期刊论文
OAI收割
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q
;
Wang, JT
;
Wang, H
;
Jin, RQ
;
Jiang, DS
;
Zhu, JJ
;
Zhao, DG
;
Yang, H
;
Zhou, SQ
;
Wu, MF
;
Smeets, D
;
Vantomme, A
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2010/03/08
STRESS
SI(111)
REDUCTION
THICKNESS
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
期刊论文
OAI收割
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ
;
Zhao, LB
;
Zhang, GY
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
;
Jia, QJ
;
Guo, LP
;
Hu, TD
收藏
  |  
浏览/下载:66/3
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
TEMPERATURE ALN INTERLAYERS
PHASE EPITAXY
OPTICAL-PROPERTIES
SURFACTANT
SUBSTRATE
STRESS
SI
REDUCTION
SAPPHIRE
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
OAI收割
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH