机构

• 半导体研究所 [25]

采集方式

• OAI收割 [25]

内容类型

• 期刊论文 [23]
• 会议论文 [2]

发表日期

• 2017 [1]
• 2013 [2]
• 2010 [2]
• 2009 [3]
• 2007 [1]
• 2006 [4]
• 更多

学科主题

• 半导体材料 [25]

筛选

浏览/检索结果: 共25条，第1-10条 帮助 限定条件 存缴方式：oaiharvest    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Tunable Fano resonance based on gratingcoupled and graphene-based Otto configuration 期刊论文  OAI收割 OPTICS EXPRESS, 2017, 卷号: 25, 期号: 20, 页码: 23880-23892 作者:  JICHENG WANG;  CI SONG;  JING HANG;  ZHENG-DA HU;  FENG ZHANG 收藏  |  浏览/下载：16/0  |  提交时间：2018/06/01 InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration 期刊论文  OAI收割 chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 048102 Li Xin-Kun; Jin Peng; Liang De-Chun; Wu Ju; Wang Zhan-Guo 收藏  |  浏览/下载：21/0  |  提交时间：2013/09/17 InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration 期刊论文  OAI收割 chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 048102 Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo 收藏  |  浏览/下载：11/0  |  提交时间：2014/03/18 Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model 期刊论文  OAI收割 semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095002 Wang Y (Wang Y.); Chen NF (Chen N. F.); Zhang XW (Zhang X. W.); Huang TM (Huang T. M.); Yin ZG (Yin Z. G.); Bai YM (Bai Y. M.) 收藏  |  浏览/下载：170/19  |  提交时间：2010/09/20 OPTICAL DIELECTRIC FUNCTION  DISPERSION-RELATIONS  CARRIER MOBILITIES  PHASE EPITAXY  DOPED GAAS  DEVICES  GASB  INP  ALXGA1-XAS  INGAASSB   Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111 Ding Y (Ding Y.); Fan WJ (Fan W. J.); Ma BS (Ma B. S.); Xu DW (Xu D. W.); Yoon SF (Yoon S. F.); Liang S (Liang S.); Zhao LJ (Zhao L. J.); Wasiak M (Wasiak M.); Czyszanowski T (Czyszanowski T.); Nakwaski W (Nakwaski W.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/11/14 VAPOR-PHASE EPITAXY  PHOTOVOLTAGE SPECTROSCOPY  PHOTOLUMINESCENCE  MODES   Depolarization blueshift in intersubband transitions of triangular quantum wires 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712 作者:   收藏  |  浏览/下载：31/0  |  提交时间：2010/04/04 aluminium compounds  effective mass  gallium arsenide  III-V semiconductors  SCF calculations  semiconductor quantum wires  spectral line shift  EXCHANGE INTERACTION  ENERGY  STATES  ABSORPTION  NANOWIRES  ELECTRONS  SUBBANDS  WELLS  FIELD   Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：310/47  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  II-VI semiconductors  indium compounds  interface states  polarisation  semiconductor heterojunctions  valence bands  wide band gap semiconductors  X-ray photoelectron spectra  zinc compounds   Electric-tunable magneto resistance effect in a two-dimensional electron gas modulated by hybrid magnetic-electric barrier nanostructure 期刊论文  OAI收割 physics letters a, 2009, 卷号: 373, 期号: 22, 页码: 1983-1987 作者:  Zhang XW;  Wang Y;  Yin ZG 收藏  |  浏览/下载：125/57  |  提交时间：2010/03/08 Magnetic-electric barrier  Ballistic transport  Magnetoresistance   Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film 期刊论文  OAI收割 journal of applied physics, 2007, 卷号: 101, 期号: 2, 页码: art.no.023506 Yan FW (Yan Fawang); Gao HY (Gao Haiyong); Zhang HX (Zhang Huixiao); Wang GH (Wang Guohong); Yang FH (Yang Fuhua); Yan JC (Yan Jianchang); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li JM (Li, Jinmin) 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29 GALLIUM NITRIDE   The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity 期刊论文  OAI收割 applied surface science, 2006, 卷号: 252, 期号: 12, 页码: 4104-4109 Wang XF; Zeng YP; Wang BQ; Zhu ZP; Du XQ; Li M; Chang BK 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 structure  NEA  integrated photosensitivity  GaAs  Cs : O  SPECTRAL RESPONSE  NEA PHOTOCATHODES  LAYER THICKNESS  CS  SURFACE  PHOTOEMISSION  SYSTEM