中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [35]
采集方式
OAI收割 [35]
内容类型
期刊论文 [29]
学位论文 [6]
发表日期
2011 [35]
学科主题
半导体材料 [35]
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共35条,第1-10条
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发表日期:2011
学科主题:半导体材料
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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
OAI收割
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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  |  
浏览/下载:69/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
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  |  
浏览/下载:118/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy
期刊论文
OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:
Yang T
;
Yang XG
;
Wang KF
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  |  
浏览/下载:65/2
  |  
提交时间:2011/07/05
HIGH-DENSITY
TEMPERATURE-DEPENDENCE
SELF-FORMATION
LAYERS
WELL
MBE
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
收藏
  |  
浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
OAI收割
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103
作者:
Wei HY
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  |  
浏览/下载:59/8
  |  
提交时间:2011/07/05
SENSITIZED SOLAR-CELLS
PHOTOCATALYZED TRANSFORMATION
CHLOROAROMATIC DERIVATIVES
ZINC-OXIDE
FILMS
POWDER
PHENOL
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:
Xu B
;
Zhou GY
;
Ye XL
;
Zhang HY
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  |  
浏览/下载:53/5
  |  
提交时间:2011/07/05
SELF-ORGANIZED ISLANDS
MOLECULAR-BEAM-EPITAXY
OPTICAL-PROPERTIES
SURFACES
EMISSION
DENSITY
SIZE
Photorefractive effects in ZnO nanorod doped liquid crystal cell
期刊论文
OAI收割
applied optics, 2011, 卷号: 50, 期号: 8, 页码: 1101-1104
作者:
Guo YB
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  |  
浏览/下载:71/7
  |  
提交时间:2011/07/05
HOLOGRAPHIC GRATING FORMATION
LUMINESCENCE
FIELDS
FILMS
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
期刊论文
OAI收割
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:
Shi K
;
Jiao CM
;
Song HP
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  |  
浏览/下载:94/7
  |  
提交时间:2011/07/05
Valence band offset
GaN/diamond heterojunction
XPS
Conduction band offset
CHEMICAL-VAPOR-DEPOSITION
ALGAN/GAN HEMTS
DIAMOND
GAN
FILMS
Measurement of wurtzite ZnO/rutile TiO(2) heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
OAI收割
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103
Wang, J
;
Liu, XL
;
Yang, AL
;
Zheng, GL
;
Yang, SY
;
Wei, HY
;
Zhu, QS
;
Wang, ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/02/06
SENSITIZED SOLAR-CELLS
PHOTOCATALYZED TRANSFORMATION
CHLOROAROMATIC DERIVATIVES
ZINC-OXIDE
FILMS
POWDER
PHENOL