中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2010 [15]
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  • 光电子学 [15]
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浏览/检索结果: 共15条，第1-10条 帮助

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Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文  OAI收割
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载：124/5  |  提交时间：2010/04/22
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文  OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载：110/2  |  提交时间：2010/04/22
Abnormal photoabsorption in high resistance GaN epilayer 期刊论文  OAI收割
acta physica sinica, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Liu WB (Liu Wen-Bao); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载：28/0  |  提交时间：2010/12/27
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文  OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文  OAI收割
: journal of alloys and compounds, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
作者:  Zhu JJ;  Yang H;  Yang H;  Zhao DG;  Zhang SM
收藏  |  浏览/下载：231/10  |  提交时间：2010/04/13
Study of GaN epilayers growth on freestanding Si cantilevers 期刊论文  OAI收割
solid-state electronics, 2010, 卷号: 54, 期号: 1, 页码: 4-7
Chen J; Wang X; Wu AM; Zhang B; Wang X; Wu YX; Zhu JJ; Yang H
收藏  |  浏览/下载：72/0  |  提交时间：2010/04/04
Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition 期刊论文  OAI收割
science china-technological sciences, 2010, 卷号: 53, 期号: 2, 页码: 313-316
Wu CM (Wu ChaoMin); Shang JZ (Shang JingZhi); Zhang BP (Zhang BaoPing); Zhang JY (Zhang JiangYong); Yu JZ (Yu JinZhong); Wang QM (Wang QiMing)
收藏  |  浏览/下载：73/2  |  提交时间：2010/05/04
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文  OAI收割
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.)
收藏  |  浏览/下载：35/0  |  提交时间：2010/12/12
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文  OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载：73/2  |  提交时间：2010/05/24
Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer 期刊论文  OAI收割
thin solid films, 2010, 卷号: 518, 期号: 17, 页码: 5028-5031
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Yang H (Yang H.)
收藏  |  浏览/下载：60/2  |  提交时间：2010/08/17